Method for dividing a composite into semiconductor chips, and semiconductor chip
First Claim
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1. A method for dividing a composite into a plurality of semiconductor chips along a dividing pattern, comprising the following steps:
- a) providing a composite which has a carrier, a semiconductor layer sequence and a functional layer;
b) forming separating trenches in the carrier along the dividing pattern; and
c) cutting through the functional layer by means of coherent radiation along the dividing pattern,wherein the divided semiconductor chips each have a part of the semiconductor layer sequence, of the carrier and of the functional layer,wherein the functional layer is first removed by means of coherent radiation before the separating trenches are formed by etching from the same side of the composite, the functional layer serving as a mask for the formation of the separating trenches so that a separate mask during formation of the separating trenches is dispensed with,wherein the functional layer comprises a connection layer by which the semiconductor layer sequence is attached to the carrier,wherein the functional layer comprises a metallic mirror layer as a partial layer,wherein the metallic mirror layer is configured to reflect the generated radiation, andwherein the connection layer is a solder layer.
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Abstract
The invention relates to a method for dividing a composite into a plurality of semiconductor chips along a dividing pattern. A composite, which comprises a substrate, a semiconductor layer sequence, and a functional layer, is provided. Separating trenches are formed in the substrate along the dividing pattern. The functional layer is cut through along the dividing pattern by means of coherent radiation. Each divided semiconductor chip has part of the semiconductor layer sequence, part of the substrate, and part of the functional layer. The invention further relates to a semiconductor chip.
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12 Claims
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1. A method for dividing a composite into a plurality of semiconductor chips along a dividing pattern, comprising the following steps:
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a) providing a composite which has a carrier, a semiconductor layer sequence and a functional layer; b) forming separating trenches in the carrier along the dividing pattern; and c) cutting through the functional layer by means of coherent radiation along the dividing pattern, wherein the divided semiconductor chips each have a part of the semiconductor layer sequence, of the carrier and of the functional layer, wherein the functional layer is first removed by means of coherent radiation before the separating trenches are formed by etching from the same side of the composite, the functional layer serving as a mask for the formation of the separating trenches so that a separate mask during formation of the separating trenches is dispensed with, wherein the functional layer comprises a connection layer by which the semiconductor layer sequence is attached to the carrier, wherein the functional layer comprises a metallic mirror layer as a partial layer, wherein the metallic mirror layer is configured to reflect the generated radiation, and wherein the connection layer is a solder layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification