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Vertical sense devices in vertical trench MOSFET

  • US 10,234,486 B2
  • Filed: 08/19/2015
  • Issued: 03/19/2019
  • Est. Priority Date: 08/19/2014
  • Status: Active Grant
First Claim
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1. An electronic circuit comprising:

  • a split gate vertical trench metal oxide semiconductor field effect transistor (MOSFET) configured for controlling currents of at least one amp;

    a current sensing FET configured to provide an electrical signal as an indication of drain to source current of said MOSFET;

    a plurality of isolation trenches that are not parallel to gate trenches of said MOSFET,wherein said plurality of isolation trenches are configured to isolate said MOSFET from said current sensing FET, andwherein a current sense ratio of said current sensing FET is greater than 15 thousand.

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