System and method for adhering a semiconductive wafer to a mobile electrostatic carrier through a vacuum
First Claim
1. A system for adhering a semiconductive wafer to a mobile electrostatic carrier (MESC) through a vacuum comprises:
- an MESC;
a layer of patterned material;
said layer of patterned material comprises an exposed surface, an unexposed surface, and a plurality of cavities;
said layer of patterned material being superimposed onto a bonding surface of said MESC;
said plurality of cavities being distributed across said layer of patterned material;
each of said plurality of cavities traversing into said layer of patterned material from said exposed surface towards said unexposed surface;
said MESC comprises a doped semiconductive substrate, a plurality of electrostatic field generating (EFG) circuits, and a capacitance charging interface;
said doped semiconductive substrate comprises a first face and a second face;
each of said plurality of EFG circuits comprises a positive pole, a negative pole, and a biased pole;
said plurality of EFG circuits being distributed across said doped semiconductive substrate;
said positive pole and said negative pole being embedded into said doped semiconductive substrate from said first face;
said positive pole and said negative pole being offset from each other across said first face;
an exposed portion of said doped semiconductive substrate being located between said positive pole and said negative pole for each of said plurality of EFG circuits;
said biased pole being said exposed portion of said doped semiconductive substrate; and
said capacitance charging interface being electrically connected to said positive pole, said negative pole, and said biased pole.
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Accused Products
Abstract
A mobile electrostatic carrier (MESC) provides a structural platform to temporarily bond a semiconductive wafer and can be used to transport the semiconductive wafer or be used to perform manufacturing processes on the semiconductive wafer. The MESC uses a plurality of electrostatic field generating (EFG) circuits to generate electrostatic fields across the MESC that allow the MESC to bond to compositional impurities within the semiconductive wafer. A layer of patterned material is superimposed across the bonding surface of MESC so that the cavities integrated into the layer of patterned material are able produce micro-vacuums that further adhere the semiconductive wafer to the MESC.
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Citations
16 Claims
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1. A system for adhering a semiconductive wafer to a mobile electrostatic carrier (MESC) through a vacuum comprises:
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an MESC; a layer of patterned material; said layer of patterned material comprises an exposed surface, an unexposed surface, and a plurality of cavities; said layer of patterned material being superimposed onto a bonding surface of said MESC; said plurality of cavities being distributed across said layer of patterned material; each of said plurality of cavities traversing into said layer of patterned material from said exposed surface towards said unexposed surface; said MESC comprises a doped semiconductive substrate, a plurality of electrostatic field generating (EFG) circuits, and a capacitance charging interface; said doped semiconductive substrate comprises a first face and a second face; each of said plurality of EFG circuits comprises a positive pole, a negative pole, and a biased pole; said plurality of EFG circuits being distributed across said doped semiconductive substrate; said positive pole and said negative pole being embedded into said doped semiconductive substrate from said first face; said positive pole and said negative pole being offset from each other across said first face; an exposed portion of said doped semiconductive substrate being located between said positive pole and said negative pole for each of said plurality of EFG circuits; said biased pole being said exposed portion of said doped semiconductive substrate; and said capacitance charging interface being electrically connected to said positive pole, said negative pole, and said biased pole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification