Semiconductor processing system

• US 10,236,204 B2
• Filed: 06/16/2016
• Issued: 03/19/2019
• Est. Priority Date: 11/28/2011
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Engelhardt, Manfred
• Primary Examiner(s): Deo, Duy Vu N
• Application Number:
  US15/184,804
• Publication Number:
  US 20160293474A1
• Time in Patent Office: 1,006 Days
• CPC Class Codes: C23C 14/34 Sputtering
• CPC Class Codes: C23C 16/4401 Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
• CPC Class Codes: C23C 16/4583 the substrate being supported substantially horizontally
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/6838 with gripping and holding devices using a vacuum; Bernoulli devices
• CPC Class Codes: H01L 21/68785 characterised by the mechanical construction of the susceptor, stage or support

Abstract

The semiconductor processing system includes a reactor chamber that has an upper wall and a lower wall. A hold member is disposed in the reactor chamber to hold a semiconductor substrate in such a way that it faces the lower wall of the reactor chamber.

Claims

1. A method for processing a semiconductor substrate, the method comprising:

providing a reactor chamber comprising an upper wall and a lower wall and a hold member to hold a semiconductor substrate to be processed;

placing the semiconductor substrate onto the hold member in such a way that it faces the lower wall of the reactor chamber;

disposing a magnet outside the reactor chamber such that a pole of the magnet is facing an exposed surface of the semiconductor substrate to distract material fragments or particles released from the semiconductor substrate; and

processing the semiconductor substrate including taking away one or more of particles, defects and flakes that have fallen down from the semiconductor substrate due to gravitational or magnetic forces, by any sort of flowing process gas or plasma in the direction of an outlet opening.

2. The method according to claim 1, further comprising:

feeding a process gas into the reactor chamber.

3. The method according to claim 1, further comprising:

feeding a plasma gas into the reactor chamber.