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Method for manufacturing a semiconductor device

  • US 10,236,352 B2
  • Filed: 10/05/2017
  • Issued: 03/19/2019
  • Est. Priority Date: 11/29/2016
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, the method comprising:

  • providing a semiconductor substrate having a first side;

    forming a trench in the semiconductor substrate, the trench having a bottom and a sidewall extending from the bottom to the first side of the semiconductor substrate;

    forming an insulation structure comprising at least a first insulation layer and a second insulation layer on the sidewall and the bottom of the trench, and a third insulation layer on the second insulation layer;

    forming a lower conductive structure in a lower portion of the trench;

    removing the second insulation layer in an upper portion of the trench while leaving the second insulation layer at least partially in the lower portion of the trench;

    forming an upper conductive structure in the upper portion of the trench; and

    removing the third insulation layer in the upper portion of the trench while leaving the third insulation layer at least partially in the lower portion of the trench.

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