Electronic device, solid state imaging apparatus, and method of producing electrode for electronic device
First Claim
Patent Images
1. An electronic device, comprising:
- a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, whereinthe second electrode is provided between the first electrode and a substrate,the second electrode is composed of indium tin complex oxide, indium zinc complex oxide or tin oxide,the first electrode including an amorphous oxide conductor composed of at least a quaternary compound of indium, zinc, gallium and oxygen or a quaternary compound of indium, zinc, aluminum and oxygen, anda difference between a work function value of the second electrode and a work function value of the first electrode being 0.4 eV or more, andwherein the first electrode includes the amorphous oxide conductor having a sheet resistance value of 3×
10 Ω
/square to 1×
103 Ω
/square and composed of at least the quaternary compound that is a transparent conducting material.
1 Assignment
0 Petitions
Accused Products
Abstract
There are provided an electronic device including a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, the first electrode including an amorphous oxide composed of at least a quaternary compound of indium, gallium and/or aluminum, zinc and oxygen, and a difference between a work function value of the second electrode and a work function value of the first electrode being 0.4 eV or more; and a method of producing an electrode for the electronic device.
-
Citations
9 Claims
-
1. An electronic device, comprising:
-
a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, wherein the second electrode is provided between the first electrode and a substrate, the second electrode is composed of indium tin complex oxide, indium zinc complex oxide or tin oxide, the first electrode including an amorphous oxide conductor composed of at least a quaternary compound of indium, zinc, gallium and oxygen or a quaternary compound of indium, zinc, aluminum and oxygen, and a difference between a work function value of the second electrode and a work function value of the first electrode being 0.4 eV or more, and wherein the first electrode includes the amorphous oxide conductor having a sheet resistance value of 3×
10 Ω
/square to 1×
103 Ω
/square and composed of at least the quaternary compound that is a transparent conducting material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
Specification