Light-emitting device
First Claim
1. A light-emitting device, comprising:
- a first light-emitting semiconductor stack comprising a first active layer;
a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer;
a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack;
a protecting layer between the reflector and the second light-emitting semiconductor stack; and
a first current spreading layer between the protecting layer and the second light-emitting semiconductor stack;
wherein the first active layer emits a first radiation of a first wavelength, and the second active layer emits a second radiation of a second wavelength longer than the first wavelength,wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.
1 Assignment
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Accused Products
Abstract
A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.
16 Citations
19 Claims
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1. A light-emitting device, comprising:
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a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and a first current spreading layer between the protecting layer and the second light-emitting semiconductor stack; wherein the first active layer emits a first radiation of a first wavelength, and the second active layer emits a second radiation of a second wavelength longer than the first wavelength, wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A light-emitting device, comprising:
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a first light-emitting semiconductor stack comprising a first active layer having a first transverse width; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; an etching stop layer between the reflector and the second light-emitting semiconductor stack, wherein the etching stop layer has a second transverse width; and a first contact layer between the etching stop layer and the second light-emitting semiconductor stack, wherein the first contact layer has a third transverse width, wherein the first active layer emits a first radiation of a first wavelength and the second active layer emits a second radiation of a second wavelength longer than the first wavelength, and wherein the third transverse width is greater than the second transverse width. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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Specification