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Light-emitting device

  • US 10,236,411 B2
  • Filed: 10/26/2016
  • Issued: 03/19/2019
  • Est. Priority Date: 11/21/2014
  • Status: Active Grant
First Claim
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1. A light-emitting device, comprising:

  • a first light-emitting semiconductor stack comprising a first active layer;

    a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer;

    a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack;

    a protecting layer between the reflector and the second light-emitting semiconductor stack; and

    a first current spreading layer between the protecting layer and the second light-emitting semiconductor stack;

    wherein the first active layer emits a first radiation of a first wavelength, and the second active layer emits a second radiation of a second wavelength longer than the first wavelength,wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.

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