Thin film total internal reflection diffraction grating for single polarization or dual polarization

• US 10,241,244 B2
• Filed: 07/29/2016
• Issued: 03/26/2019
• Est. Priority Date: 07/29/2016
• Status: Active Grant

• Current Assignee: Lumentum Operations, LLC (Lumentum Holdings Inc.)
• Original Assignee: Lumentum Operations, LLC (Lumentum Holdings Inc.)
• Inventors: Miller, John Michael, Wills, Gonzalo, Tian, Lu, O'Leary, Michael
• Primary Examiner(s): Font, Frank G
• Application Number:
  US15/224,070
• Publication Number:
  US 20180031744A1
• Time in Patent Office: 970 Days
• Field of Search: 35948503, 359566-576, 385 37
• CPC Class Codes: G02B 27/4261 having a diffractive element with major polarization dependent properties
• CPC Class Codes: G02B 5/1814 structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings G02B5/189 takes precedence
• CPC Class Codes: G02B 5/1857 using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
• CPC Class Codes: G02B 5/1861 Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials G02B5/1809, G02B5/1828, G02B5/1833, G02B5/1838 and G02B5/1847 take precedence

Abstract

A diffraction grating may include a substrate. The diffraction grating may include an etch stop layer to prevent etching of the substrate. The etch stop layer may be deposited on the substrate. The diffraction grating may include a marker layer to indicate an etch end-point associated with etching of a dielectric layer. The marker layer may be deposited on a portion of the etch stop layer. The diffraction grating may include the dielectric layer to form a grating layer after being etched. The dielectric layer may be deposited on at least the marker layer.

Claims

1. A diffraction grating, comprising:

a substrate;

an etch stop layer to prevent etching of the substrate,

the etch stop layer being on the substrate;

a marker layer, comprising an etchable material, that indicates an etch end-point associated with etching of a dielectric layer,

the marker layer being on a portion of the etch stop layer; and

the dielectric layer that forms a periodic grating layer after being etched,

the dielectric layer being on at least the marker layer.

2. The diffraction grating of claim 1, further comprising:

an encapsulation layer to protect the periodic grating layer after etching of the dielectric layer,

the encapsulation layer being on at least the periodic grating layer.

3. The diffraction grating of claim 1, where the marker layer comprises tantala, silica or silicon nitride.

4. The diffraction grating of claim 1, where a thickness of the marker layer is less than or equal to approximately 50 nanometers.

5. The diffraction grating of claim 1, where a first diffraction efficiency of the diffraction grating is greater than 96 percent and a second diffraction efficiency of the diffraction grating is less than approximately 2 percent,

the first diffraction efficiency corresponding to a transverse-magnetic polarization, and

the second diffraction efficiency corresponding to a transverse-electric polarization.

6. The diffraction grating of claim 1, where a first diffraction efficiency of the diffraction grating and a second diffraction efficiency of the diffraction grating are greater than 94 percent,

the first diffraction efficiency corresponding to a transverse-magnetic polarization, and

the second diffraction efficiency corresponding to a transverse-electric polarization.

7. The diffraction grating of claim 1, where the dielectric layer comprises silicon or tantala.

8. A diffraction grating, to operate based on total internal reflection, comprising:

a substrate;

an etch stop layer to prevent etching of the substrate,

the etch stop layer being on the substrate;

a dielectric grating layer on the etch stop layer,

the dielectric grating layer being a periodic grating; and

an encapsulation layer to protect the dielectric grating layer,

the encapsulation layer being on at least the dielectric grating layer, and

the encapsulation layer comprising a planar surface that spans a width of the dielectric grating layer.

9. The diffraction grating of claim 8, further comprising:

a marker layer to signal an etch end-point associated with etching of the dielectric grating layer,

the marker layer being on the etch stop layer, and

the dielectric grating layer being on the marker layer.

10. The diffraction grating of claim 8, where the encapsulation layer comprises silica.

11. The diffraction grating of claim 8, where a thickness of the encapsulation layer is approximately 0.15 microns to 0.28 microns greater than a thickness of the dielectric grating layer.

12. The diffraction grating of claim 8, where a first diffraction efficiency of the diffraction grating and a second diffraction efficiency of the diffraction grating are greater than 94 percent,

the first diffraction efficiency corresponding to a transverse-magnetic polarization, and

the second diffraction efficiency corresponding to a transverse-electric polarization.

13. The diffraction grating of claim 8, where a first diffraction efficiency of the diffraction grating is greater than 96 percent and a second diffraction efficiency of the diffraction grating is less than approximately 2 percent,

the first diffraction efficiency corresponding to a transverse-magnetic polarization, and

the second diffraction efficiency corresponding to a transverse-electric polarization.

14. The diffraction grating of claim 8, where the diffraction grating is included in a grism assembly.

15. A method of manufacturing a diffraction grating, the method comprising:

depositing an etch stop layer on a substrate;

depositing a marker layer on a portion of the etch stop layer;

depositing a dielectric layer on the marker layer;

etching the dielectric layer to form a grating layer,

during etching the dielectric layer,

preventing, by the etch stop layer, etching of the substrate; and

determining, based on etching the marker layer, that the etching the dielectric layer is to be stopped; and

etching the marker layer to indicate an etch end-point associated with the etching of the dielectric layer.

16. The method of claim 15, further comprising:

depositing an encapsulation layer associated with protecting the grating layer,

the encapsulation layer to be deposited on the grating layer.

17. The method of claim 16, where the encapsulation layer is formed of silica and a difference between a thickness of the encapsulation layer and a thickness of the grating layer is approximately 0.25 microns.

18. The method of claim 15, where the marker layer is formed of tantala, silica or silicon nitride and has a thickness that is less than or equal to approximately 50 nanometers.

19. The method of claim 15, where an area corresponding to the portion of the etch stop layer on which the marker layer is deposited is an off-chip area of the substrate.

20. The method of claim 15, where a first diffraction efficiency of the diffraction grating and a second diffraction efficiency of the diffraction grating are greater than 94 percent,

the first diffraction efficiency corresponding to a transverse-magnetic polarization, and

the second diffraction efficiency corresponding to a transverse-electric polarization.