Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devices

• US 10,242,865 B2
• Filed: 03/24/2017
• Issued: 03/26/2019
• Est. Priority Date: 03/11/2016
• Status: Expired due to Fees

• Current Assignee: Elpis Technologies Inc. (Wi-LAN Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Haigh, Jr., Thomas J., Nguyen, Son V., Priyadarshini, Deepika, Shobha, Hosadurga
• Primary Examiner(s): Menz, Laura M
• Application Number:
  US15/468,818
• Publication Number:
  US 20170263451A1
• Time in Patent Office: 732 Days
• CPC Class Codes: C23C 16/36 Carbonitrides
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: H01L 21/02123 the material containing silicon
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02222 the compound being a silazane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02299 pre-treatment
• CPC Class Codes: H01L 23/291 Oxides or nitrides or carbides, e.g. ceramics, glass
• CPC Class Codes: H01L 23/3171 the coating being directly applied to the semiconductor body, e.g. passivation layer H01L23/3178 takes precedence

Abstract

A method for depositing a dielectric layer that includes introducing a substrate into a process chamber of a deposition tool; and heating the substrate to a process temperature. The method may further include introducing precursors that include at least one dielectric providing gas species for a deposited layer and at least one hydrogen precursor gas into the process chamber of the deposition tool. The hydrogen precursor gas is introduced to the deposition chamber at a flow rate ranging from 50 sccm to 5000 sccm. The molar ratio for Hydrogen/Silicon gas precursor can be equal or greater than 0.05.

Claims

1. A method for depositing a layer comprising:

introducing a substrate into a process chamber of a deposition tool;

heating the substrate to a process temperature;

introducing precursors that include at least one providing gas species for a deposited layer and at least one hydrogen precursor gas into the process chamber of the deposition tool, wherein the hydrogen precursor gas is introduced to the process chamber at a flow rate ranging from 50 sccm to 5000 sccm; and

activating a plasma in the process chamber to deposit a layer having a low hydrogen content of 30 wt. % or less, wherein the deposited dielectric is SiCNH, the SiCNH having a shrinkage that is less than 4.5% after being treated with an ultraviolet curing process for a temperature ranging from 350°

C. to 400°

C. for a time period ranging from 500 seconds to 600 seconds.

2. The method of claim 1, wherein the deposition tool comprises a plasma enhanced chemical vapor deposition chamber or a high density plasma chemical vapor deposition (HDP) chamber.

3. The method of claim 1, wherein the at least one providing gas species for the deposited layer comprises at least one of a silicon containing precursor, a carbon containing precursor and a nitrogen containing precursor.

4. The method of claim 3, wherein the silicon containing precursor comprises hexachlorodisilane (Si₂Cl₆), tetrachlorosilane (SiCl₄), dichlorosilane (Cl₂SiH₂), trichlorosilane (Cl₃SiH), methylsilane ((CH₃)SiH₃), dimethylsilane ((CH₃)₂SiH₂), trimethyl silane ((CH₃)₃SiH), tetramethyl silane ((CH₃)₄Si), ethylsilane ((CH₃CH₂)SiH₃), methyldisilane ((CH₃)Si₂H₅), dimethyldisilane ((CH₃)₂Si₂H₄), hexamethyldisilane ((CH₃)₆Si₂) or combinations thereof.

5. The method of claim 1, wherein the carbon containing precursor comprises methylsilane (CH₃SiH₃), dimethylsilane ((CH₃)₂SiH₂), trimethyl silane ((CH₃)₃SiH), tetramethyl silane ((CH₃)₄Si), ethylsilane (CH₃CH₂SiH₃), methane (CH₄), ethylene (C₂H₄), ethyne (C₂H₂), propane (C₃H₈), propene (C₃H₆), butyne (C₄H₆) or combinations thereof.

6. The method of claim 1, wherein the nitrogen containing precursor comprises ammonia (NH₃), hydrazine (N₂H₄), methyl hydrazine ((CH₃)HN₂H₂), dimethyl hydrazine ((CH₃)₂N₂H₂), t-butylhydrazine (C₄H₉N₂H₃), phenylhydrazine (C₆H₅N₂H₃), N₂, N₂/H₂, NH₃, N₂H₄ plasmas, 2,2′

-azotertbutane ((CH₃)₆C₂N₂), methylazide (CH₃N₃), ethylazide (C₂H₅N₃), trimethylsilylazide (Me₃SiN₃), and combinations thereof.

7. The method of claim 1, wherein the at least one providing gas species for the deposited layer is introduced to the process chamber at a flow rate ranging from 50 sccm to about 2,000 sccm.

8. The method of claim 1, wherein the hydrogen precursor gas is H₂ gas.

9. The method of claim 1, wherein the SiCNH has a density greater than 2.25 grm/cm³.