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Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devices

  • US 10,242,865 B2
  • Filed: 03/24/2017
  • Issued: 03/26/2019
  • Est. Priority Date: 03/11/2016
  • Status: Expired due to Fees
First Claim
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1. A method for depositing a layer comprising:

  • introducing a substrate into a process chamber of a deposition tool;

    heating the substrate to a process temperature;

    introducing precursors that include at least one providing gas species for a deposited layer and at least one hydrogen precursor gas into the process chamber of the deposition tool, wherein the hydrogen precursor gas is introduced to the process chamber at a flow rate ranging from 50 sccm to 5000 sccm; and

    activating a plasma in the process chamber to deposit a layer having a low hydrogen content of 30 wt. % or less, wherein the deposited dielectric is SiCNH, the SiCNH having a shrinkage that is less than 4.5% after being treated with an ultraviolet curing process for a temperature ranging from 350°

    C. to 400°

    C. for a time period ranging from 500 seconds to 600 seconds.

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