Selective deposition of silicon nitride on silicon oxide using catalytic control
First Claim
1. A method of depositing silicon nitride selectively on an exposed silicon oxide surface of a substrate, the method comprising:
- providing the substrate having the exposed silicon oxide surface and an exposed silicon surface;
exposing the substrate to trimethylaluminum to form an aluminum-containing moiety selectively on the exposed silicon oxide surface relative to the exposed silicon surface; and
performing one or more cycles of thermal atomic layer deposition, each cycle comprising exposing the substrate to an aminosilane precursor and exposing the substrate to a hydrazine without igniting a plasma to form silicon nitride selectively on the exposed silicon oxide surface relative to the exposed silicon surface,wherein the hydrazine has a chemical structure of;
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Abstract
It will be understood that in some embodiments, nitrogen-containing ligands bonded to the silicon may not necessarily be identical to another nitrogen-containing ligand bonded to the same silicon atom. For example, in some embodiments, R1 and R2 may be different alkyl ligands. In some embodiments, a first NR1R2 ligand attached to a silicon atom may not be the same as or have the same alkyl ligands as another NR1R2 ligand attached to the same silicon atom. As noted above, R1 and R2 may be any alkyl ligand. In one example, the aminosilane may be N′N′-dimethylsilanediamine, having the structure:
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Citations
17 Claims
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1. A method of depositing silicon nitride selectively on an exposed silicon oxide surface of a substrate, the method comprising:
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providing the substrate having the exposed silicon oxide surface and an exposed silicon surface; exposing the substrate to trimethylaluminum to form an aluminum-containing moiety selectively on the exposed silicon oxide surface relative to the exposed silicon surface; and performing one or more cycles of thermal atomic layer deposition, each cycle comprising exposing the substrate to an aminosilane precursor and exposing the substrate to a hydrazine without igniting a plasma to form silicon nitride selectively on the exposed silicon oxide surface relative to the exposed silicon surface, wherein the hydrazine has a chemical structure of; - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification