Micro pick and bond assembly

• US 10,242,892 B2
• Filed: 10/17/2014
• Issued: 03/26/2019
• Est. Priority Date: 10/17/2014
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Chang, Peter L., Pawashe, Chytra, Mayberry, Michael C., Tseng, Jia-Hung
• Primary Examiner(s): Le, Thao X
• Assistant Examiner(s): Dykes, Laura
• Application Number:
  US15/512,342
• Publication Number:
  US 20170278733A1
• Time in Patent Office: 1,621 Days
• CPC Class Codes: H01L 21/67144 Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: H01L 2224/95 at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 24/00 Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
• CPC Class Codes: H01L 24/75 Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/95 at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Micro pick-and-bond heads, assembly methods, and device assemblies. In, embodiments, micro pick-and-bond heads transfer micro device elements, such as (micro) LEDs, en masse from a source substrate to a target substrate, such as a LED display substrate. Anchor and release structures on the source substrate enable device elements to be separated from a source substrate, while pressure sensitive adhesive (PSA) enables device elements to be temporarily affixed to pedestals of a micro pick-and-bond head. Once the device elements are permanently affixed to a target substrate, the PSA interface may be defeated through peeling and/or thermal decomposition of an interface layer.

Claims

1. A micro-pick-and-bond (μ

PnB) assembly head, comprising;

a substrate; and

a plurality of pedestals over a surface of the substrate, wherein each pedestal comprises;

a base comprising a dielectric material, wherein the base is mechanically coupled to the substrate; and

a pressure sensitive adhesive (PSA) material exposed at a free end of the pedestal opposite the substrate, wherein the PSA is separated from the substrate by the base, and the PSA has a lateral dimension of micrometer scale and;

a plurality of flexural members over the substrate, each pedestal coupled to the substrate through one or more of the flexural members.

2. The μ

PnB assembly head of claim 1, wherein;

a largest lateral dimension of the pedestal base is less than 10 μ

m; and

a height of the pedestal from the flexural member is less than 10 μ

m.

3. The μ

PnB assembly head of claim 2, wherein the dielectric material is between the PSA material and the flexural member.

4. The μ

PnB assembly head of claim 3, wherein;

the PSA material is a silicone-based PSA material; and

the pedestal base comprises polyimide.

5. The μ

PnB assembly head of claim 2, wherein at least one of;

the PSA material has sloped sidewalls with the PSA having lateral dimensions proximal to a tip being smaller than those proximal to the substrate;

or

the base comprises a dielectric material disposed between the PSA material and the substrate and a portion of the dielectric base material is undercut with the area the dielectric base layer proximal to the substrate being less than the area of an exposed surface the adhesive material.

6. The μ

PnB assembly head of claim 1, wherein the PSA material is stable to at least 160°

C.

7. The μ

PnB assembly head of claim 6, wherein the PSA material is stable to at least 250°

C., and comprises a siloxane polymer.

8. The μ

PnB assembly head of claim 1, wherein each flexural member is elastically deformable by at least 0.1 μ

m in a direction perpendicular to the substrate surface.

9. The μ

PnB assembly head of claim 8, wherein;

each flexural member has a spring constant of 100-600 N/m; and

the PSA material has a peel strength of no more than 1.0 N/cm.

10. The μ

PnB assembly head of claim 9, wherein;

each flexural member extends over a recess in the substrate surface;

the pedestal is coupled to a region of the flexural member between anchoring points that contact the substrate surface; and

the flexural member comprises at least one metal thin film or semiconductor thin film anchored to the substrate by a dielectric thin film material.

11. The μ

PnB assembly head of claim 1, wherein;

the substrate comprises glass or crystalline silicon having a site flatness of less than 1 μ

m for an 8×

25 mm site; and

the flexural member comprises a crystalline silicon layer of the substrate or a metal thin film separated from the substrate by a stoichiometric SiO₂ layer.

12. The μ

PnB assembly head of claim 1 wherein the pedestal has a circular top surface with a diameter less than 5 μ

m.

13. A method of fabricating the micro-pick-and-bond (μ

PnB) assembly head of claim 1, the method comprising;

depositing a dielectric material layer over the substrate;

depositing a pressure sensitive adhesive (PSA) material layer over the dielectric material layer; and

patterning the PSA material layer and the dielectric material layer into the plurality of pedestals.

14. The method of claim 13, further comprising:

depositing a dielectric base layer over a low stress material layer disposed on the substrate;

depositing the PSA material layer over the dielectric base layer;

patterning the PSA material layer and the dielectric base layer into the plurality of pedestals patterning the low stress material layer into a plurality of flexural members, each flexural member structurally supporting at least one of the pedestals; and

forming a recess in the substrate that undercuts the flexural member below the pedestal.

15. The method of claim 14, wherein:

depositing the dielectric base layer further comprises spin coating a mixture including a high temperature stable polymer over the low stress material and curing or drying the mixture into the dielectric base layer;

depositing the PSA material layer further comprises spin coating a liquid mixture including a siloxane polymer and curing or drying the mixture into the PSA material layer;

patterning the PSA material layer and the dielectric base layer into a plurality of pedestals further comprises;

depositing and patterning a photoresist over the PSA material layer; and

etching or dissolving portions of the PSA material layer and dielectric base layer unprotected by the patterned photoresist.

16. A micro-pick-and-bond (μ

PnB) assembly method, comprising;

aligning a plurality of die anchored to a source substrate with the plurality of pedestals of claim 1;

pressing each the plurality of die with a surface of at least one of the pedestals to adhere a die to a pedestal with the PSA material;

breaking anchors between the die and the source substrate by displacing the pedestals relative to the source substrate while the die are adhered to the pedestals with the PSA material;

aligning the plurality of die affixed to the pedestals with lands on a bonding target substrate;

affixing the plurality of die to the lands on the bonding target substrate; and

breaking the bond between the die and the pedestals while the die are affixed to the lands.

17. The method of claim 16, wherein breaking the bond between the die and the pedestals further comprises at least one of displacing the pedestals relative to the target substrate, or thermally decomposing a thermally decomposable material interfacing the PSA material.

18. The method of claim 17, wherein breaking the bond between the die and the pedestals further comprises displacing the pedestals in both lateral and vertical directions concurrently to peel the PSA material from an interface material of either the pedestal or the die.

19. The method of claim 16, wherein affixing the plurality of die to the lands on the bonding target substrate further comprises solder bonding the die.