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Semiconductor device, method of manufacturing the same and generation method of unique information

  • US 10,242,950 B2
  • Filed: 06/23/2017
  • Issued: 03/26/2019
  • Est. Priority Date: 06/24/2016
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device having a function of generating unique information based on an output of a circuit component of a second circuit, the method comprising:

  • manufacturing a first circuit and the second circuit;

    manufacturing the first circuit in accordance with a first manufacturing condition; and

    manufacturing the second circuit in accordance with a second manufacturing condition;

    when the second manufacturing condition is compared with the first manufacturing condition, the second manufacturing condition further includes a factor which increases a variation of the circuit component;

    wherein the first manufacturing condition comprises setting a diffusion region of a first transistor having a channel length less than a constant value as an LDD structure and performing a channel-ion implantation by forming a first dopant concentration on a surface of a substrate;

    wherein the second manufacturing condition comprises not setting a diffusion region of a second transistor having a channel length less than the constant value as the LDD structure and performing the channel-ion implantation by forming the first dopant concentration at a first position that is deeper than the surface of the substrate.

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