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Transistor with field electrode

  • US 10,243,071 B2
  • Filed: 12/22/2016
  • Issued: 03/26/2019
  • Est. Priority Date: 12/30/2015
  • Status: Active Grant
First Claim
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1. A method comprising:

  • epitaxially growing a semiconductor layer on a surface of a semiconductor body, wherein the semiconductor body includes at least one field electrode dielectric and a field electrode in a trench of the semiconductor body, and wherein epitaxially growing the semiconductor layer comprises laterally overgrowing the field electrode dielectric with the semiconductor layer so as to completely laterally cover the at least one field electrode dielectric and the field electrode with the semiconductor layer;

    forming a body region and a source region in the semiconductor layer;

    forming a gate electrode that is dielectrically insulated from the body region by a gate dielectric;

    forming a contact plug that extends from a surface of the semiconductor layer to the field electrode and adjoins the source region and the body region.

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