Transistor with field electrode
First Claim
Patent Images
1. A method comprising:
- epitaxially growing a semiconductor layer on a surface of a semiconductor body, wherein the semiconductor body includes at least one field electrode dielectric and a field electrode in a trench of the semiconductor body, and wherein epitaxially growing the semiconductor layer comprises laterally overgrowing the field electrode dielectric with the semiconductor layer so as to completely laterally cover the at least one field electrode dielectric and the field electrode with the semiconductor layer;
forming a body region and a source region in the semiconductor layer;
forming a gate electrode that is dielectrically insulated from the body region by a gate dielectric;
forming a contact plug that extends from a surface of the semiconductor layer to the field electrode and adjoins the source region and the body region.
1 Assignment
0 Petitions
Accused Products
Abstract
Disclosed is a transistor device and a method for producing thereof. The transistor device includes at least one transistor cell, wherein the at least one transistor cell includes: a source region, a body region and a drift region in a semiconductor body; a gate electrode dielectrically insulated from the body region by a gate dielectric; a field electrode dielectrically insulated from the drift region by a field electrode dielectric; and a contact plug extending from a first surface of the semiconductor body to the field electrode and adjoining the source region and the body region.
-
Citations
20 Claims
-
1. A method comprising:
-
epitaxially growing a semiconductor layer on a surface of a semiconductor body, wherein the semiconductor body includes at least one field electrode dielectric and a field electrode in a trench of the semiconductor body, and wherein epitaxially growing the semiconductor layer comprises laterally overgrowing the field electrode dielectric with the semiconductor layer so as to completely laterally cover the at least one field electrode dielectric and the field electrode with the semiconductor layer; forming a body region and a source region in the semiconductor layer; forming a gate electrode that is dielectrically insulated from the body region by a gate dielectric; forming a contact plug that extends from a surface of the semiconductor layer to the field electrode and adjoins the source region and the body region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification