Vertical structure LEDs

• US 10,243,101 B2
• Filed: 12/04/2017
• Issued: 03/26/2019
• Est. Priority Date: 04/09/2002
• Status: Expired due to Fees

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Lee, Jong Lam, Jeong, In-kwon, Yoo, Myung Cheol
• Primary Examiner(s): Mandala, Victor A
• Application Number:
  US15/831,084
• Publication Number:
  US 20180158986A1
• Time in Patent Office: 477 Days
• CPC Class Codes: H01C 7/006 Thin film resistors
• CPC Class Codes: H01C 7/008 Thermistors H01C7/02 - H01C7/06 take precedence
• CPC Class Codes: H01L 27/0802 Resistors only
• CPC Class Codes: H01L 28/20 Resistors
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: Y10S 438/958 Passivation layer
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

A light emitting diode can include a metal support layer: a GaN-based semiconductor structure having a less than 5 microns thickness on the metal support layer, the GaN-based semiconductor structure including a p-type GaN-based semiconductor layer, an active layer on the p-type GaN-based semiconductor layer, and an n-type GaN-based semiconductor layer on the active layer; a p-type electrode on the metal support layer and including a plurality of metal layers; an n-type electrode on a flat portion of an upper surface of the GaN-based semiconductor structure, and the n-type electrode contacts the flat portion; a metal pad layer on the n-type electrode; and an insulating layer including a first part disposed on the upper surface of the GaN-based semiconductor structure, and a second part disposed on an entire side surface of the GaN-based semiconductor structure, in which the metal pad layer includes a first portion having a flat bottom surface on the n-type electrode, and a second portion having stepped surfaces.

Claims

1. A light emitting diode, comprising:

a metal support layer;

a GaN-based semiconductor structure having a less than 5 microns thickness on the metal support layer, the GaN-based semiconductor structure comprising;

a p-type GaN-based semiconductor layer,

an active layer on the p-type GaN-based semiconductor layer, and

an n-type GaN-based semiconductor layer on the active layer;

a p-type electrode on the metal support layer, wherein the p-type electrode includes a plurality of metal layers;

an n-type electrode on a flat portion of an upper surface of the GaN-based semiconductor structure, wherein the n-type electrode contacts the flat portion;

a metal pad layer on the n-type electrode; and

an insulating layer comprising;

a first part disposed on the upper surface of the GaN-based semiconductor structure, and

a second part disposed on an entire side surface of the GaN-based semiconductor structure,

wherein the metal pad layer comprises;

a first portion having a flat bottom surface on the n-type electrode, and

a second portion having stepped surfaces,

wherein the first part of the insulating layer is patterned to form an open space exposing the n-type electrode,

wherein the metal pad layer is disposed at the open space,

wherein the first part of the insulating layer contacts the upper surface of the GaN-based semiconductor structure and a side surface of the n-type electrode,

wherein the second part of the insulating layer is separated from the n-type electrode, and

wherein the n-type electrode overlaps at least a portion of the p-type electrode in a thickness direction of the GaN-based semiconductor structure.

2. The light emitting diode according to claim 1 wherein a width of the open space is different than a width of the metal pad layer, and

wherein a width of the p-type electrode is greater than a width of the n-type electrode.

3. The light emitting diode according to claim 1, wherein the insulating layer includes at least one of SiO2 or Si3N4,

wherein the insulating layer further comprises a third part disposed between the p-type GaN-based semiconductor layer of the GaN-based semiconductor structure and the metal support layer, and

wherein the third part of the insulating layer overlaps the first part of the insulating layer in the thickness direction of the GaN-based semiconductor structure.

4. The light emitting diode according to claim 1, wherein a thickness of the GaN-based semiconductor structure is smaller than a thickness of the metal support layer.

5. The light emitting diode according to claim 1, wherein the metal support layer is made of at least two metals selected from the group comprising Cu, Cr, Ni, Au, Ag, Mo, Pt, Pd, and W.

6. The light emitting diode according to claim 1, wherein the first part of the insulating layer contacts an upper surface of the n-electrode, and

wherein an uppermost surface of the metal pad layer is disposed at a higher position than the first part of the insulating layer.

7. The light emitting diode according to claim 1, wherein a ratio of a thickness occupied by the p-type GaN-based semiconductor layer in the GaN-based semiconductor structure is greater than 1%.

8. The light emitting diode according to claim 1, wherein an area of a portion contacting the p-type GaN-based semiconductor layer in the insulating layer is smaller than an area of a portion contacting the n-type GaN-based semiconductor layer in the insulating layer.

9. The light emitting diode according to claim 1, wherein the p-type electrode includes Pt or Ni.

10. The light emitting diode according to claim 1, wherein the metal pad layer includes at least one of Cr or Au.

11. A light emitting diode, comprising:

a metal support layer;

a GaN-based semiconductor structure on the metal support layer, the GaN-based semiconductor layer comprising;

a p-type GaN-based semiconductor layer,

an active layer on the p-type GaN-based semiconductor layer and

an n-type GaN-based semiconductor layer on the active layer;

a p-type electrode between the metal support layer and the p-type GaN-based semiconductor layer;

an n-type electrode on the GaN-based semiconductor structure;

a metal pad layer on the n-type electrode; and

an insulating layer comprising;

a first part disposed on an upper surface of the GaN-based semiconductor structure, and

a second part disposed on a side surface of the GaN-based semiconductor structure,

wherein the first part of the insulating layer contacts the upper surface of the GaN-based semiconductor structure, a side surface of the n-type electrode and a top surface of the n-type electrode,

wherein the n-type electrode overlaps at least a portion of the p-type electrode in a thickness direction of the GaN-based semiconductor structure,

wherein the p-type electrode contacts a top surface of the metal support layer and a bottom surface of the GaN-based semiconductor structure,

wherein the upper surface of the GaN-based semiconductor structure has a flat top portion contacting the n-type electrode,

wherein an area of a portion contacting the p-type GaN-based semiconductor layer in the insulating layer is smaller than an area of a portion contacting the n-type GaN-based semiconductor layer in the insulating layer,

wherein the first part of the insulating layer is patterned to form an open space exposing the n-type electrode,

wherein the metal pad layer is disposed at the open space,

wherein the metal pad layer comprises;

a first portion having a flat bottom surface on the n-type electrode and

a second portion having stepped surfaces,

wherein a first width of the first portion of the metal pad layer is different than a second width of the second portion of the metal pad layer,

wherein the second portion of the metal pad layer overlaps the first portion of the metal pad layer in the thickness direction of the GaN-based semiconductor structure, and

wherein a thickness of the GaN-based semiconductor structure is less than 5 μ

m.

12. The light emitting diode according to claim 11, wherein a sum of the thickness of the GaN-based semiconductor structure and a thickness of the p-type electrode is less than a sum of 10 nm and 5 μ

m.

13. The light emitting diode according to claim 11, wherein a thickness of the metal pad layer is greater than a thickness of the n-type electrode.

14. The light emitting diode according to claim 11, wherein a width of the GaN-based semiconductor structure is different than a width of the p-type electrode.

15. The light emitting diode according to claim 11, wherein a width of the p-type electrode is larger than a width of the n-type electrode.

16. The light emitting diode according to claim 11, wherein a width of the n-type electrode is smaller than a width of the metal support layer.

17. The light emitting diode according to claim 11, wherein the n-type electrode comprises at least one of Al or Ti, and the p-type electrode comprises at least one layer of Pt or Ni.

18. The light emitting diode according to claim 11, wherein the insulating layer further comprises a third part disposed between the p-type GaN-based semiconductor layer of the GaN-based semiconductor structure and the metal support layer, and

wherein the third part of the insulating layer overlaps the first part of the insulating layer in the thickness direction of the GaN-based semiconductor structure.

19. A light emitting diode, comprising:

a metal support layer comprising Ti and a non-metal material;

a GaN-based semiconductor structure having a less than 5 microns thickness on the metal support layer, the GaN-based semiconductor layer comprising;

a p-type GaN-based semiconductor layer,

an active layer on the p-type GaN-based semiconductor layer and

an n-type GaN-based semiconductor layer on the active layer;

a p-type electrode between the metal support layer and the p-type GaN-based semiconductor layer, wherein the p-type electrode includes a plurality of metal layers;

an n-type electrode on the GaN-based semiconductor structure;

a metal pad layer on the n-type electrode; and

an insulating layer including at least one of SiO2 or Si3N4, the insulating layer comprising;

a first part disposed on an upper surface of the GaN-based semiconductor structure, and

a second part disposed on an entire side surface of the GaN-based semiconductor structure,

wherein the first part of the insulating layer contacts the upper surface of the GaN-based semiconductor structure,

wherein the n-type electrode overlaps at least a portion of the p-type electrode in a thickness direction of the GaN-based semiconductor structure,

wherein the p-type electrode contacts a top surface of the metal support layer and a bottom surface of the GaN-based semiconductor structure,

wherein the first part of the insulating layer is patterned to form an open space exposing the n-type electrode,

wherein the metal pad layer is disposed at the open space and an uppermost surface of the metal pad layer is disposed at a higher position than the first part of the insulating layer,

wherein the second part of the insulating layer is separated from the n-type electrode, and

wherein the n-type electrode comprises Ti and Al.

20. The light emitting diode according to claim 19, wherein a ratio of a thickness occupied by the p-type GaN-based semiconductor layer in the GaN-based semiconductor structure is greater than 1%.