High voltage monolithic LED chip with improved reliability
First Claim
1. A monolithic LED chip, comprising:
- a plurality of active regions on a submount;
electrically conductive interconnect elements connecting at least two of said active regions, wherein said interconnect elements comprise a material and/or structure that resists electromigration, wherein said interconnect elements comprise at least one reflective layer between adjacent active regions and around the edge of said adjacent active regions, wherein said at least one reflective layer reflects light from at least one of said plurality of active regions that would otherwise reach said interconnect elements, wherein said interconnect elements interconnect said active regions from a same side of said active regions, wherein said interconnect elements are embedded within said submount.
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Abstract
Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.
157 Citations
37 Claims
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1. A monolithic LED chip, comprising:
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a plurality of active regions on a submount; electrically conductive interconnect elements connecting at least two of said active regions, wherein said interconnect elements comprise a material and/or structure that resists electromigration, wherein said interconnect elements comprise at least one reflective layer between adjacent active regions and around the edge of said adjacent active regions, wherein said at least one reflective layer reflects light from at least one of said plurality of active regions that would otherwise reach said interconnect elements, wherein said interconnect elements interconnect said active regions from a same side of said active regions, wherein said interconnect elements are embedded within said submount. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 37)
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18. A monolithic LED chip, comprising:
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a plurality of active regions on a submount; interconnection layers between said active regions and said submount that carry an electrical signal to and are in electrical contact with said active regions, wherein said interconnection layers are embedded within said submount between said active regions, wherein said interconnection layers interconnect said active regions from a same side of said active regions; a reflective layer in said submount that is positioned to reflect LED chip light that would otherwise reach said interconnection layers; and a current spreading layer between said reflective layer and one of said active regions. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
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26. A monolithic LED chip, comprising:
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a plurality of active regions on a submount; and electrically conductive interconnect elements in said submount between said active regions, wherein said interconnect elements are in electrical contact with said active regions, wherein said conductive interconnect elements comprise a first layer of electrically conductive material and a second layer of material having a higher resistance to electromigration than said first layer, wherein said interconnect elements interconnect said active regions from a same side of said active regions, and wherein said first layer extends beyond four edges of said second layer. - View Dependent Claims (27, 28, 29, 30, 31)
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32. A monolithic LED chip, comprising:
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a plurality of active regions on a submount; integral electrically conductive interconnect elements in said submount between said active regions, wherein said interconnect elements are in electrical contact with said active regions on a same side of said active regions wherein said conductive interconnect elements comprise a metal alloy interconnection layer; and a current spreading layer between a reflective layer and one of said active regions, wherein said reflective layer is at least partially between said interconnect elements and said active regions, and wherein said reflective layer is distinct from said interconnect elements. - View Dependent Claims (33, 34, 35, 36)
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Specification