Light-emitting diode (LED), LED package and apparatus including the same
First Claim
1. A multi-color light-emitting apparatus comprising:
- first, second, and third light-emitting structures each including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer between the first and second-conductivity-type semiconductor layers;
a first optical wavelength conversion layer on an upper surface of the first-conductivity-type semiconductor layer of the first light-emitting structures;
a first optical filter layer on an upper surface of the first optical wavelength conversion layer;
a reflection layer on a lateral surface of the first optical wavelength conversion layer;
a first electrode electrically connected to the first-conductivity-type semiconductor layer;
a second electrode arranged on a lower surface of the second-conductivity-type semiconductor layer and electrically connected to the second-conductivity-type semiconductor layer, wherein lateral surfaces of the first optical filter layer and the reflection layer are substantially coplanar;
a first metal post and a second metal post arranged on and connected to the first electrode and the second electrode, respectively; and
a lateral encapsulation arranged between the first metal post and the second metal post and insulating the first metal post from the second metal post,wherein the lateral encapsulation is spaced apart from the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer.
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Accused Products
Abstract
A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
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Citations
20 Claims
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1. A multi-color light-emitting apparatus comprising:
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first, second, and third light-emitting structures each including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer between the first and second-conductivity-type semiconductor layers; a first optical wavelength conversion layer on an upper surface of the first-conductivity-type semiconductor layer of the first light-emitting structures; a first optical filter layer on an upper surface of the first optical wavelength conversion layer; a reflection layer on a lateral surface of the first optical wavelength conversion layer; a first electrode electrically connected to the first-conductivity-type semiconductor layer; a second electrode arranged on a lower surface of the second-conductivity-type semiconductor layer and electrically connected to the second-conductivity-type semiconductor layer, wherein lateral surfaces of the first optical filter layer and the reflection layer are substantially coplanar; a first metal post and a second metal post arranged on and connected to the first electrode and the second electrode, respectively; and a lateral encapsulation arranged between the first metal post and the second metal post and insulating the first metal post from the second metal post, wherein the lateral encapsulation is spaced apart from the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A display device comprising:
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a plurality of pixels each including; a first subpixel having a first LED, wherein the first LED includes; a first light-emitting structure including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer and an active layer disposed between the first and second-conductivity-type semiconductor layers; a first optical wavelength conversion layer on an upper surface of the first-conductivity-type semiconductor layer; a first optical filter layer on the first optical wavelength conversion layer; a reflection layer on a lateral side of the first optical wavelength conversion layer; a first electrode configured to be electrically connected to the first-conductivity-type semiconductor layer; a second electrode arranged on a lower surface of the second-conductivity-type semiconductor layer and configured to be electrically connected to the second-conductivity-type semiconductor layer, wherein lateral surfaces of the first optical filter layer and the reflection layer are substantially coplanar; a first metal post and a second metal post arranged on and connected to the first electrode and the second electrode, respectively; and a lateral encapsulation arranged between the first metal post and the second metal post and insulating the first metal post from the second metal post, wherein the lateral encapsulation is spaced apart from the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A multi-color light-emitting apparatus comprising:
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first, second, and third light-emitting structures each including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer between the first and second-conductivity-type semiconductor layers; a first optical wavelength conversion layer on an upper surface of the first-conductivity-type semiconductor layer of the first light-emitting structures; a first optical filter layer on an upper surface of the first optical wavelength conversion layer; a reflection layer on a lateral surface of the first optical wavelength conversion layer; a first electrode electrically connected to the first-conductivity-type semiconductor layer; a second electrode arranged on a lower surface of the second-conductivity-type semiconductor layer and electrically connected to the second-conductivity-type semiconductor layer, wherein outer lateral surfaces of the first optical filter layer and the reflection layer are substantially coplanar; a first metal post and a second metal post arranged on and connected to the first electrode and the second electrode, respectively; and a lateral encapsulation arranged between and the first and second electrodes, wherein outer lateral surfaces of the first optical wavelength conversion layer and the lateral encapsulation are substantially coplanar. - View Dependent Claims (19, 20)
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Specification