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Bias control for stacked transistor configuration

  • US 10,243,519 B2
  • Filed: 09/28/2016
  • Issued: 03/26/2019
  • Est. Priority Date: 12/28/2012
  • Status: Active Grant
First Claim
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1. A circuital arrangement comprising:

  • i) an amplifier comprising;

    stacked transistors having a plurality of bias terminals comprising a plurality of gate terminals of the stacked transistors and a drain terminal of an output transistor of the stacked transistors;

    an input port operatively connected to an input transistor of the stacked transistors;

    an output port operatively connected to the drain terminal of the output transistor; and

    a reference terminal operatively coupling the input transistor to a reference potential, wherein;

    the stacked transistors comprise two subsets of transistors operatively arranged in series, a first subset comprising the input transistor operatively connected between the reference potential at the reference terminal and a second subset, the second subset comprising one or more transistors operatively connected in series with each other, at least one transistor of the one or more transistors being the output transistor, the second subset operatively connected between the first subset and a variable supply voltage provided to the output transistor; and

    ii) a gate bias circuit,wherein;

    the gate bias circuit is configured to operatively provide at a gate terminal of each transistor of the one or more transistors of the second subset a bias voltage, the bias voltage comprising;

    a) a dynamic bias voltage which is a function of the variable supply voltage when a voltage value of the variable supply voltage is above a predetermined value associated to the each transistor, the dynamic bias voltage configured to control the each transistor to operate in its saturation region of operation; and

    b) a fixed bias voltage when the voltage value of the variable supply voltage is below the predetermined value associated to the each transistor, the fixed bias voltage configured to control the each transistor to operate in its triode region of operation in a top to down sequence so that the output transistor operates in its triode region of operation first, followed by a transistor of the one or more transistors of the second subset connected to the top transistor, and ending with a transistor of the one or more transistors of the second subset connected to the input transistor.

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