Biometric imaging devices and associated methods
First Claim
1. A system for identifying an individual, comprising:
- an active light source capable of emitting electromagnetic radiation having at least one wavelength of from about 800 nanometers (nm) to about 1200 nm;
an imager device positioned to receive the electromagnetic radiation upon reflection from an individual to generate an electronic representation of the individual, the imager device comprising;
at least one infrared light detecting pixel having a silicon semiconductor device layer exhibiting a thickness of less than about 10 microns, the semiconductor device layer comprising at least two doped regions forming a junction and a textured region having a topology comprising a plurality of nanostructures or microstructures formed by one of lasing and chemical etching, the textured region being positioned to interact with the electromagnetic radiation so as to increase the path length within the semiconductor device layer, wherein the imager device has a quantum efficiency of at least about 33% for electromagnetic radiation having at least one wavelength of greater than 800 nm and a responsivity in a range from about 0.1 Amps/Watt (A/W) to about 0.55 A/W for at least one wavelength in a range from about 1000 nm to about 1200 nm, wherein the at least one infrared light detecting pixel further comprises a thermal sensing layer disposed on a side of the semiconductor device layer opposite the incoming electromagnetic radiation for capturing thermal images of the individual; and
at least one visible light detecting pixel configured to detect at least one wavelength in the range of from about 350 nm to about 800 nm for capturing visible light images of the individual; and
an image processing module functionally coupled to the imager device and operable to receive the electronic representation, wherein the image processing module is operable to process the electronic representation into an individual representation having at least one substantially unique identification trait.
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Accused Products
Abstract
Systems, devices, and methods for identifying an individual in both cooperative and non-cooperative situations are provided. In one aspect, for example, a system for identifying an individual can include an active light source capable of emitting electromagnetic radiation having at least one wavelength of from about 700 nm to about 1200 nm, and an imager device positioned to receive the electromagnetic radiation upon reflection from an individual to generate an electronic representation of the individual. The system can also include an image processing module functionally coupled to the imager device to receive the electronic representation. The image processing module processes the electronic representation into an individual representation having at least one substantially unique identification trait. The imager device can include a semiconductor device layer having a thickness of less than about 10 microns, at least two doped regions forming a junction, and a textured region positioned to interact with the electromagnetic radiation, and can have an external quantum efficiency of at least about 33% for at least one wavelength of greater than 800 nm.
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Citations
24 Claims
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1. A system for identifying an individual, comprising:
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an active light source capable of emitting electromagnetic radiation having at least one wavelength of from about 800 nanometers (nm) to about 1200 nm; an imager device positioned to receive the electromagnetic radiation upon reflection from an individual to generate an electronic representation of the individual, the imager device comprising; at least one infrared light detecting pixel having a silicon semiconductor device layer exhibiting a thickness of less than about 10 microns, the semiconductor device layer comprising at least two doped regions forming a junction and a textured region having a topology comprising a plurality of nanostructures or microstructures formed by one of lasing and chemical etching, the textured region being positioned to interact with the electromagnetic radiation so as to increase the path length within the semiconductor device layer, wherein the imager device has a quantum efficiency of at least about 33% for electromagnetic radiation having at least one wavelength of greater than 800 nm and a responsivity in a range from about 0.1 Amps/Watt (A/W) to about 0.55 A/W for at least one wavelength in a range from about 1000 nm to about 1200 nm, wherein the at least one infrared light detecting pixel further comprises a thermal sensing layer disposed on a side of the semiconductor device layer opposite the incoming electromagnetic radiation for capturing thermal images of the individual; and at least one visible light detecting pixel configured to detect at least one wavelength in the range of from about 350 nm to about 800 nm for capturing visible light images of the individual; and an image processing module functionally coupled to the imager device and operable to receive the electronic representation, wherein the image processing module is operable to process the electronic representation into an individual representation having at least one substantially unique identification trait. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 23)
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17. A method of identifying an individual, comprising:
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emitting infrared electromagnetic radiation having at least one wavelength of from about 800 nanometers (nm) to about 1200 nm toward the individual; receiving the infrared electromagnetic radiation reflected from the individual into an imager device to generate an electronic representation of the individual, the imager device comprising; at least one infrared light detecting pixel having a silicon semiconductor device layer exhibiting a thickness of less than about 10 microns, the semiconductor device layer comprising at least two doped regions forming a junction and a textured region having a topology comprising a plurality of nanostructures or microstructures formed by one of lasing and chemical etching, the textured region being positioned to interact with the electromagnetic radiation so as to increase the path length within the semiconductor device layer, wherein the imager device has a quantum efficiency of at least about 33% for electromagnetic radiation having at least one wavelength of greater than 800 nm and a responsivity in a range from about 0.1 Amps/Watt (A/W) to about 0.55 A/W for at least one wavelength in a range from about 1000 nm to about 1200 nm, wherein the at least one infrared light detecting pixel further comprises a thermal sensing layer disposed on a side of the semiconductor device layer opposite the incoming electromagnetic radiation for capturing thermal images of the individual; and at least one visible light detecting pixel configured to detect at least one wavelength in the range of from about 350 nm to about 800 nm for capturing visible light images of the individual; processing the electronic representation into an individual representation having at least one substantially unique identification trait; and using the at least one substantially unique identification trait to identify the individual. - View Dependent Claims (18, 19, 20, 21, 22, 24)
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Specification