Strain and pressure sensing device, microphone, method for manufacturing strain and pressure sensing device, and method for manufacturing microphone

• US 10,246,324 B2
• Filed: 09/12/2017
• Issued: 04/02/2019
• Est. Priority Date: 09/27/2011
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Fukuzawa, Hideaki, Ohguro, Tatsuya, Kojima, Akihiro, Sugizaki, Yoshiaki, Takayanagi, Mariko, Fuji, Yoshihiko, Hori, Akio, Hara, Michiko
• Primary Examiner(s): Jamal, Alexander
• Application Number:
  US15/701,633
• Publication Number:
  US 20180009656A1
• Time in Patent Office: 567 Days
• Field of Search: 381114, 381115, 381173, 381174, 381190
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81C 1/00158 Diaphragms, membranes manufacture process for semi-permeable inorganic membranes B01D67/0039
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2203/0771 Stacking the electronic processing unit and the micromechanical structure
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: H04R 1/08 Mouthpieces; Microphones; Attachments therefor
• CPC Class Codes: H04R 19/005 using semiconductor materials
• CPC Class Codes: H04R 19/04 Microphones H04R19/01 takes precedence
• CPC Class Codes: H04R 31/00 Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor manufacture of microstructural arrangements of deformable or non-deformable structures in general B81C1/00182

Abstract

According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.

Claims

1. A sensor, comprising:

a supporter;

a beam including a movable portion, the movable portion including a first region having an end fixed to the supporter and a second region extending from the first region, the end of the first region extending in a first direction, the second region of the movable portion having an end opposite the end of the first region and movable in a second direction crossing the first direction; and

a sensing element fixed to the first region, the second region not overlapping the sensing element in the second direction, the sensing element including a first magnetic layer, a direction of a first magnetization of the first magnetic layer being along the first direction.

2. The device according to claim 1, wherein the sensing element further includes:

a second magnetic layer; and

an intermediate layer provided between the first magnetic layer and the second magnetic layer, the intermediate layer being nonmagnetic.

3. The device according to claim 2, wherein an electrical resistance between the first magnetic layer and the second magnetic layer changes in accordance with a deformation of the movable portion.

4. The device according to claim 2, wherein the second magnetic layer is a magnetization free layer.

5. The device according to claim 2, wherein at least one of the first magnetic layer and the second magnetic layer includes at least one of Fe, Co and Ni.

6. The device according to claim 1, wherein the sensing element further includes a bias layer juxtaposed with the first magnetic layer to apply a bias magnetic field to the first magnetic layer.

7. The device according to claim 2, wherein a magnetostriction constant of the second magnetic layer is not less than 10⁻

5.