Quantum dot light emitting diode (LED) with suppressed photobrightening
First Claim
1. A treated quantum dot (QD) with suppressed photobrightening comprising:
- a QD nanocrystal having a surface with a maximum cross-sectional dimension of 10 nanometers (nm), capable of emissions in the visible spectrum of light;
elements attached to the surface of the QD nanocrystal consisting of cations; and
,wherein the treated QD emits a non-varying intensity of first wavelength of light in the visible spectrum when subjected to a continuous exposure of a second wavelength of light having an intensity of greater than 50 watts per square centimeter (W/cm2).
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Abstract
A device and associated method are provided for a light emitting diode device (LED) with suppressed quantum dot (QD) photobrightening. The QD surfaces, with a maximum cross-sectional dimension of 10 nanometers, are treated with a solution including a multi-valent cation salt. In response to heating the solution, multi-valent cations become attached to the surface of the QD nanocrystals, forming treated QDs that are deposited overlying a top surface of an LED. The LED device emits a non-varying intensity of first wavelength light in the visible spectrum from the treated QDs, when subjected to a continuous exposure of a second wavelength of LED light having an intensity of greater than 50 watts per square centimeter. For example, blue, green, or red color light may be emitted when exposed to LED light in the ultraviolet (UV) spectrum, or a green or red color light when exposed to a blue color LED light.
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Citations
21 Claims
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1. A treated quantum dot (QD) with suppressed photobrightening comprising:
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a QD nanocrystal having a surface with a maximum cross-sectional dimension of 10 nanometers (nm), capable of emissions in the visible spectrum of light; elements attached to the surface of the QD nanocrystal consisting of cations; and
,wherein the treated QD emits a non-varying intensity of first wavelength of light in the visible spectrum when subjected to a continuous exposure of a second wavelength of light having an intensity of greater than 50 watts per square centimeter (W/cm2). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A quantum dot (QD) light emitting diode (LED) device with suppressed photobrightening, the device comprising:
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an LED with a top surface; a plurality of treated QDs with suppressed photobrightening overlying the LED top surface, each treated QD comprising; a QD nanocrystal having a surface with a maximum cross-sectional dimension of 10 nanometers (nm), capable of emissions in the visible spectrum of light; elements attached to the surface of the QD nanocrystal consisting of cations; and
,wherein the device emits a non-varying intensity of first wavelength of light from the treated QDs in the visible spectrum when subjected to a continuous exposure of a second wavelength of LED light having an intensity of greater than 50 watts per square centimeter (W/cm2). - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification