Composite HAMR media structure for high areal density

• US 10,249,335 B2
• Filed: 09/22/2017
• Issued: 04/02/2019
• Est. Priority Date: 09/22/2016
• Status: Active Grant

• Current Assignee: Seagate Technology LLC (Seagate Technology Holdings Plc), Regents of The University of Minnesota (University of Minnesota)
• Original Assignee: Seagate Technology LLC (Seagate Technology Holdings Plc), Regents of The University of Minnesota (University of Minnesota)
• Inventors: Victora, Randall, Liu, Zengyuan, Huang, Pin-wei, Ju, Ganping, Thiele, Jan-Ulrich
• Primary Examiner(s): Bernatz, Kevin M
• Application Number:
  US15/713,023
• Publication Number:
  US 20180082713A1
• Time in Patent Office: 557 Days
• Field of Search: None
• CPC Class Codes: G11B 17/028 of discs rotating during transducing operation
• CPC Class Codes: G11B 2005/0021 Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal
• CPC Class Codes: G11B 2220/23 characterised in that the disc has a specific layer structure
• CPC Class Codes: G11B 5/012 Recording on, or reproducing or erasing from, magnetic disks G11B17/00, G11B19/00 take precedence
• CPC Class Codes: G11B 5/1278 specially adapted for magnetisations perpendicular to the surface of the record carrier
• CPC Class Codes: G11B 5/672 having different compositions in a plurality of magnetic layers, e.g. layer compositions having differing elemental components or differing proportions of elements
• CPC Class Codes: G11B 5/676 having magnetic layers separated by a nonmagnetic layer, e.g. antiferromagnetic layer, Cu layer or coupling layer

Abstract

A heat-assisted magnetic recording media structure with exchange-coupled composite layer structure may be utilized in a data storage device. The heat-assisted magnetic recording disk structure can have a FePt-based layer as a storage layer and a FePt-based or a CoPt-based magnetic layer with higher Curie temperature as a write layer. The interface between the write layer and the storage layer may be separated by an exchange control layer. The composite structure can be optimized to reduce jitter for high density data storage by tuning the exchange coupling between the write layer and storage layer.

Claims

1. An apparatus comprising a data storage medium having an exchange coupled composite (ECC) structure comprising a coupling layer (ECL) contacting and disposed between a storage layer and a write layer, the storage layer having a lower Curie temperature and a higher anisotropy than the respective ECL and write layers, the ECL coupling the write layer to the storage layer with a coupling strength from 0.1 Jex/Jo to 0.6 Jex/Jo.

2. The apparatus of claim 1, wherein the coupling strength is tuned with respect to a grain size of the storage layer and a data track width where data bits of the data storage medium are stored.

3. The apparatus of claim 1, wherein a write temperature for the ECC is less than a Curie temperature for the storage layer.

4. The apparatus of claim 1, wherein the write layer comprises an FePt-based or CoPt-based material.

5. The apparatus of claim 1, wherein the write layer comprises FePtY or CoPtZ where Y and Z is chosen from the group of C, an oxide, a nitride, a carbide, and combinations thereof.

6. The apparatus of claim 1, wherein the storage layer has a room temperature anisotropy of greater then 40 kOe.

7. The apparatus of claim 1, wherein the storage layer has a Curie temperature of 550K or more and 750K or less.

8. The apparatus of claim 1, wherein the write layer has a Curie temperature of 650K or more and 1400K or less.

9. The apparatus of claim 1, wherein the write layer has a room temperature magnetic saturation magnetization of 400 emu/cc or more.

10. An apparatus comprising a heat-assisted magnetic recording (HAMR) data storage medium having an exchange coupled composite (ECC) structure comprising a coupling layer (ECL) contacting and disposed between a storage layer and a write layer, the storage layer comprising an FePtX material and the write layer comprising a FePtY or CoPtZ material where X, Y, and Z are chosen from the group of C, an oxide, a nitride, and a carbide, the storage layer having a lower Curie temperature and a higher anisotropy than the respective ECL and write layers, the ECL coupling the write layer to the storage layer with a coupling strength that corresponds with a transition jitter for the ECC of 2 nm or less.

11. The apparatus of claim 10, wherein the write layer has an anisotropy of 10 kOe or more.

12. The apparatus of claim 10, wherein the HAMR data storage medium has a 3% or lower Curie temperature distribution with respect to the storage and write layers.

13. The apparatus of claim 10, wherein the storage layer has a thickness of 4-10 nm.

14. The apparatus of claim 10, wherein the write layer has a thickness of 1-6 nm.

15. The apparatus of claim 10, wherein the HAMR data storage medium has a write temperature of 670 K or more and 690 K or less.

16. The apparatus of claim 10, wherein the ECL comprises a non-magnetic material chosen from the group of:

CoX and RuY where X and Y are each one of;

Ru, Cr, Ta, and Zr.

17. A method comprising:

forming a storage layer atop a substrate;

depositing an exchange coupling layer in contact with the storage layer;

creating a write layer in contact with the exchange coupling layer, the storage layer having a lower Curie temperature and a higher anisotropy than the respective ECL and write layers, the ECL coupling the write layer to the storage layer with a coupling strength of 0.1-0.6 Jex/Jo; and

applying a data write field to the storage, exchange coupling, and write layers to provide a predetermined magnetic polarity.

18. The method of claim 17, wherein the storage, exchange coupling, and write layers are each magnetic materials.

19. The method of claim 17, wherein the write, exchange coupling, and storage layers are each heated in combination with an applied write field of 5-15 kOe.

20. The method of claim 17, wherein at least one underlayer is positioned between the substrate and the storage layer.