Cavity formation using sacrificial material
First Claim
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1. A method for fabricating a semiconductor device, the method comprising:
- providing a semiconductor substrate;
forming an oxide layer in the semiconductor substrate;
forming a transistor device over the oxide layer;
removing at least part of a backside of the semiconductor substrate;
applying a sacrificial material below the oxide layer;
covering the sacrificial material with an interface material; and
removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface material.
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Abstract
A method for fabricating a semiconductor device involves providing a semiconductor substrate, forming an oxide layer in the semiconductor substrate, forming a transistor device over the oxide layer, removing at least part of a backside of the semiconductor substrate, applying a sacrificial material below the oxide layer, covering the sacrificial material with an interface material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.
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Citations
20 Claims
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1. A method for fabricating a semiconductor device, the method comprising:
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providing a semiconductor substrate; forming an oxide layer in the semiconductor substrate; forming a transistor device over the oxide layer; removing at least part of a backside of the semiconductor substrate; applying a sacrificial material below the oxide layer; covering the sacrificial material with an interface material; and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a transistor device implemented over an oxide layer; a patterned form of sacrificial material disposed below the oxide layer and the transistor device; and an interface layer covering at least a portion of a backside of the patterned form of sacrificial material. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A semiconductor die comprising:
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a semiconductor substrate; an oxide layer disposed above the semiconductor substrate; a transistor device implemented over the oxide layer; and an interface layer disposed between the oxide layer and the semiconductor substrate, the interface layer having a cavity formed therein that is connected to a channel that leads to an edge of the semiconductor die. - View Dependent Claims (17, 18, 19, 20)
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Specification