Semiconductor device and manufacturing method of the same

• US 10,249,644 B2
• Filed: 02/11/2016
• Issued: 04/02/2019
• Est. Priority Date: 02/13/2015
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Miyake, Hiroyuki, Kusunoki, Koji
• Primary Examiner(s): Spalla, David
• Application Number:
  US15/041,356
• Publication Number:
  US 20160240562A1
• Time in Patent Office: 1,146 Days
• CPC Class Codes: G02F 1/134363 for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
• CPC Class Codes: G02F 1/134372 for fringe field switching [FFS] where the common electrode is not patterned
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136231 for reducing the number of lithographic steps
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

An object is to provide a display device with high productivity by reducing the number of masks and the number of steps. Another object is to provide a display device with high yield. A pixel transistor and a driver transistor are formed over a substrate having an insulating surface in the same step. A pixel electrode electrically connected to the pixel transistor is one electrode. The other electrode is supplied with a fixed potential. A region where a pair of electrodes overlap with each other is used as a capacitor. Accordingly, the number of masks and steps are reduced to provide a display device with high productivity.

Claims

1. A semiconductor device comprising:

a first transistor comprising a gate electrode over a substrate;

a first electrode electrically connected to the first transistor, the first electrode being a pixel electrode;

a second transistor comprising a first gate electrode over the substrate;

a second electrode overlapping with the first gate electrode of the second transistor;

a third electrode over the substrate, the third electrode being supplied with a fixed potential, and

a fourth electrode comprising a low-resistance oxide film over the substrate;

wherein the second electrode and the third electrode are formed by processing a same light-transmitting conductive film comprising a light-transmitting material,

wherein a first capacitor is formed in a region where the first electrode and the third electrode overlap with each other with an insulating film provided therebetween, and

wherein a second capacitor is formed in a region where the third electrode and the fourth electrode overlap with each other.

2. The semiconductor device according to claim 1, wherein the second electrode is a back gate electrode of the second transistor.

3. The semiconductor device according to claim 1, wherein the gate electrode of the first transistor and the first gate electrode of the second transistor are on a same surface.

4. The semiconductor device according to claim 1, wherein the light-transmitting material is selected from indium tin oxide, indium oxide including tungsten oxide, indium zinc oxide including tungsten oxide, indium oxide including titanium oxide, indium tin oxide including titanium oxide, indium zinc oxide, and indium tin oxide to which silicon oxide is added.

5. The semiconductor device according to claim 1, wherein the second transistor is in a driver circuit.

6. The semiconductor device according to claim 1, wherein the insulating film is a silicon nitride film.

7. The semiconductor device according to claim 1, wherein the semiconductor device is a liquid crystal display device.

8. The semiconductor device according to claim 1,

wherein the second transistor further comprises an oxide semiconductor layer over the first gate electrode, and

wherein the oxide semiconductor layer is surrounded by the first gate electrode and the second electrode in a channel width direction of the second transistor.

9. A semiconductor device comprising:

a first transistor comprising a gate electrode over a substrate and a first oxide semiconductor layer over the gate electrode, the first oxide semiconductor layer comprising a channel formation region;

a first electrode electrically connected to the first transistor, the first electrode being a pixel electrode;

a second transistor comprising a first gate electrode over the substrate and a second oxide semiconductor layer over the first gate electrode, the second oxide semiconductor layer comprising a channel formation region;

a first insulating film over the channel formation region of the first transistor and the channel formation region of the second transistor;

a second insulating film over the first insulating film;

a second electrode overlapping with the first gate electrode of the second transistor;

a third electrode over the substrate, the third electrode being supplied with a fixed potential, and

a fourth electrode comprising a low-resistance oxide film over the substrate,

wherein the second electrode and the third electrode are formed by processing a same light-transmitting conductive film comprising a light-transmitting material,

wherein a first capacitor is formed in a region where the first electrode and the third electrode overlap with each other with the second insulating film provided therebetween, and

wherein a second capacitor is formed in a region where the third electrode and the fourth electrode overlap with each other.

10. The semiconductor device according to claim 9, wherein the second electrode is a back gate electrode of the second transistor.

11. The semiconductor device according to claim 9, wherein the gate electrode of the first transistor and the first gate electrode of the second transistor are on a same surface.

12. The semiconductor device according to claim 9, wherein the light-transmitting material is selected from indium tin oxide, indium oxide including tungsten oxide, indium zinc oxide including tungsten oxide, indium oxide including titanium oxide, indium tin oxide including titanium oxide, indium zinc oxide, and indium tin oxide to which silicon oxide is added.

13. The semiconductor device according to claim 9, wherein the second transistor is in a driver circuit.

14. The semiconductor device according to claim 9, wherein the second insulating film is a silicon nitride film.

15. The semiconductor device according to claim 9, wherein the semiconductor device is a liquid crystal display device.

16. The semiconductor device according to claim 9, wherein the first oxide semiconductor layer and the second oxide semiconductor layer comprise indium, gallium, and zinc.

17. The semiconductor device according to claim 9,

wherein the second oxide semiconductor layer is surrounded by the first gate electrode and the second electrode in a channel width direction of the second transistor.

18. A semiconductor device comprising:

a first transistor comprising a gate electrode over a substrate;

a first electrode electrically connected to the first transistor, the first electrode being a pixel electrode;

a second transistor comprising a first gate electrode over the substrate;

a second electrode overlapping with the first gate electrode of the second transistor;

a third electrode over the substrate, the third electrode being supplied with a fixed potential; and

a fourth electrode comprising a low-resistance oxide film over the substrate,

wherein the second electrode and the third electrode are formed by processing a same light-transmitting conductive film comprising a light-transmitting material,

wherein a first capacitor is formed in a region where the first electrode and the third electrode overlap with each other, and

wherein a second capacitor is formed in a region where the third electrode and the fourth electrode overlap with each other.

19. The semiconductor device according to claim 18, wherein the second electrode is a back gate electrode of the second transistor.

20. The semiconductor device according to claim 18, wherein the gate electrode of the first transistor and the first gate electrode of the second transistor are on a same surface.

21. The semiconductor device according to claim 18, wherein the light-transmitting material is selected from indium tin oxide, indium oxide including tungsten oxide, indium zinc oxide including tungsten oxide, indium oxide including titanium oxide, indium tin oxide including titanium oxide, indium zinc oxide, and indium tin oxide to which silicon oxide is added.

22. The semiconductor device according to claim 18, wherein the second transistor is in a driver circuit.

23. The semiconductor device according to claim 18, wherein the semiconductor device is a liquid crystal display device.

24. The semiconductor device according to claim 18,

wherein the second transistor further comprises an oxide semiconductor layer over the first gate electrode, and

wherein the oxide semiconductor layer is surrounded by the first gate electrode and the second electrode in a channel width direction of the second transistor.