Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module

• US 10,249,645 B2
• Filed: 07/27/2016
• Issued: 04/02/2019
• Est. Priority Date: 02/05/2014
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Okazaki, Kenichi, Katayama, Masahiro, Nakada, Masataka
• Primary Examiner(s): Lopez, Fei Fei Yeung
• Application Number:
  US15/220,430
• Publication Number:
  US 20160336352A1
• Time in Patent Office: 979 Days
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors

Abstract

To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

Claims

1. A semiconductor device comprising:

a transistor comprising;

an oxide semiconductor layer over a first insulating film;

a second insulating film over the oxide semiconductor layer;

a gate electrode over the second insulating film;

a third insulating film over the gate electrode;

a source electrode over the third insulating film; and

a drain electrode over the third insulating film,

wherein the source electrode is electrically connected to the oxide semiconductor layer, and

wherein the drain electrode is electrically connected to the oxide semiconductor layer, and

a capacitor comprising;

a first conductive layer;

the third insulating film over the first conductive layer; and

a second conductive layer over the third insulating film,

wherein the first insulating film comprises silicon and oxygen,

wherein the oxide semiconductor layer comprises a first portion being a channel region, a second portion, and a third portion between the first portion and the second portion,

wherein the gate electrode overlaps with the first portion,

wherein a part of the third insulating film overlaps with the third portion,

wherein a resistivity of the third portion is higher than a resistivity of the second portion.

2. The semiconductor device according to claim 1, wherein the first conductive layer and the gate electrode include the same material.

3. The semiconductor device according to claim 1, wherein the second conductive layer, the source electrode and the drain electrode include the same material.

4. The semiconductor device according to claim 1, wherein the third insulating film comprises silicon and nitrogen.

10. The semiconductor device according to claim 1, wherein the first conductive layer is over the first insulating film.

5. A semiconductor device comprising:

a transistor comprising;

an oxide semiconductor layer over a first insulating film;

a second insulating film over the oxide semiconductor layer;

a gate electrode over the second insulating film;

a third insulating film over the gate electrode;

a source electrode over the third insulating film; and

a drain electrode over the third insulating film,

wherein the source electrode is electrically connected to the oxide semiconductor layer, and

wherein the drain electrode is electrically connected to the oxide semiconductor layer, and

a capacitor comprising;

a first conductive layer;

the third insulating film over the first conductive layer; and

a second conductive layer over the third insulating film,

wherein the first insulating film comprises silicon and oxygen,

wherein the oxide semiconductor layer comprises a first portion, a second portion, and a third portion between the first portion and the second portion,

wherein the gate electrode overlaps with the first portion,

wherein a part of the third insulating film overlaps with the second portion,

wherein a first concentration of an element in the first portion is lower than a second concentration of the element of the second portion, and

wherein a third concentration of the element of the third portion is lower than the second concentration.

6. The semiconductor device according to claim 5, wherein the first conductive layer and the gate electrode include the same material.

7. The semiconductor device according to claim 5, wherein the second conductive layer, the source electrode and the drain electrode include the same material.

8. The semiconductor device according to claim 5, wherein the third insulating film comprises silicon and nitrogen.

9. The semiconductor device according to claim 5, wherein the element in the first portion, the second portion and the third portion is hydrogen.

11. The semiconductor device according to claim 5, wherein the first conductive layer is over the first insulating film.

12. A semiconductor device comprising:

a transistor comprising;

a first insulating film;

an oxide semiconductor layer over the first insulating film;

a second insulating film over the oxide semiconductor layer;

a gate electrode over the second insulating film;

a third insulating film over the gate electrode;

a source electrode over the third insulating film; and

a drain electrode over the third insulating film,

wherein the source electrode is electrically connected to the oxide semiconductor layer, and

wherein the drain electrode is electrically connected to the oxide semiconductor layer, and

a capacitor comprising;

a first conductive layer;

the third insulating film over the first conductive layer; and

a second conductive layer over the third insulating film,

wherein the first insulating film comprises silicon and oxygen,

wherein the second insulating film comprises silicon and oxygen,

wherein a first portion of the oxide semiconductor layer overlaps with the gate electrode, and a second portion of the oxide semiconductor layer does not overlap with the gate electrode and the second insulating film,

wherein the second portion of the oxide semiconductor layer is thinner than the first portion of the oxide semiconductor layer,

wherein a first portion of the first insulating film overlaps with the oxide semiconductor layer, and a second portion of the first insulating film does not overlap with the oxide semiconductor layer,

wherein the second portion of the first insulating film is thinner than the first portion of the first insulating film,

wherein the third insulating film is in contact with a top surface of the second insulating film and a side surface of the second insulating film,

wherein the gate electrode does not overlap with the source electrode and,

wherein the gate electrode does not overlap with the drain electrode.

13. The semiconductor device according to claim 12, wherein a concentration of argon in the first portion of the oxide semiconductor layer is lower than a concentration of argon in the second portion of the oxide semiconductor layer.

14. The semiconductor device according to claim 12,

wherein a third portion of the oxide semiconductor layer located between the first portion of the oxide semiconductor layer and the second portion of the oxide semiconductor layer overlaps with the second insulating film, and does not overlap with the gate electrode, and

wherein the third portion of the oxide semiconductor layer has lower resistivity than the first portion of the oxide semiconductor layer.

15. The semiconductor device according to claim 12, wherein the second portion of the oxide semiconductor layer has lower resistivity than the first portion of the oxide semiconductor layer.