Semiconductor device and display device comprising oxide semiconductor layer
First Claim
1. A semiconductor device comprising:
- a gate electrode layer;
a gate insulating layer;
an oxide semiconductor layer comprising a channel formation region adjacent to the gate electrode layer with the gate insulating layer therebetween, the oxide semiconductor layer comprising indium; and
source and drain electrode layers in electrical contact with the oxide semiconductor layer,wherein the oxide semiconductor layer comprises a crystalline region including a crystal with a grain diameter greater than or equal to 1 nm and less than or equal to 20 nm, andwherein a c-axis of the crystal is oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer.
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Abstract
An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a gate electrode layer; a gate insulating layer; an oxide semiconductor layer comprising a channel formation region adjacent to the gate electrode layer with the gate insulating layer therebetween, the oxide semiconductor layer comprising indium; and source and drain electrode layers in electrical contact with the oxide semiconductor layer, wherein the oxide semiconductor layer comprises a crystalline region including a crystal with a grain diameter greater than or equal to 1 nm and less than or equal to 20 nm, and wherein a c-axis of the crystal is oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a gate electrode layer; a gate insulating layer; an oxide semiconductor layer comprising a channel formation region adjacent to the gate electrode layer with the gate insulating layer therebetween, the oxide semiconductor layer comprising indium, and source and drain electrode layers in electrical contact with the oxide semiconductor layer; wherein the oxide semiconductor layer comprises a first crystalline region including a crystal whose c-axis is oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer in a superficial portion of the oxide semiconductor layer and a second crystalline region including microcrystals, and wherein a grain diameter of the crystal in the first crystalline region is greater than or equal to 1 nm and less than or equal to 20 nm. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A display device comprising:
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a pixel portion including a first transistor over a substrate, wherein the first transistor comprises; a first gate electrode layer; a first gate insulating layer; a first oxide semiconductor layer comprising a channel formation region adjacent to the first gate electrode layer with the first gate insulating layer therebetween, the first oxide semiconductor layer comprising indium; and first source and drain electrode layers in electrical contact with the first oxide semiconductor layer, wherein the first oxide semiconductor layer comprises a crystalline region with a grain diameter greater than or equal to 1 nm and less than or equal to 20 nm, and wherein the crystalline region in the first oxide semiconductor layer includes a crystal whose c-axis is oriented in a direction substantially perpendicular to a surface of the first oxide semiconductor layer. - View Dependent Claims (18, 19, 20)
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Specification