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Stacked nanosheet field effect transistor device with substrate isolation

  • US 10,249,709 B2
  • Filed: 10/20/2017
  • Issued: 04/02/2019
  • Est. Priority Date: 02/02/2017
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a nanosheet stack structure formed on a semiconductor substrate, wherein the nanosheet stack structure comprises a rare earth oxide (REO) layer formed on the semiconductor substrate, and a semiconductor channel layer disposed adjacent to the REO layer;

    a metal gate structure formed over the nanosheet stack structure;

    a gate insulating spacer disposed on vertical sidewalls of the metal gate structure, wherein end portions of the semiconductor channel layer are exposed through the gate insulating spacer; and

    a first source/drain region and a second source/drain region formed in contact with a respective one of the end portions of the semiconductor channel layer exposed through the gate insulating spacer;

    wherein a portion of the metal gate structure is disposed between the semiconductor channel layer and the REO layer, wherein the REO layer isolates the metal gate structure from the semiconductor substrate;

    wherein the first and second source/drain regions comprise an epitaxial semiconductor material that is epitaxially grown on the end portions of the semiconductor channel layer, and wherein the first and second source/drain regions are formed in contact with portions of the REO layer which extend past the gate insulating spacer such that the REO layer isolates the first and second source/drain regions from the semiconductor substrate.

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