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Method for making a semiconductor device including a resonant tunneling diode structure having a superlattice

  • US 10,249,745 B2
  • Filed: 08/07/2017
  • Issued: 04/02/2019
  • Est. Priority Date: 08/08/2016
  • Status: Active Grant
First Claim
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1. A method for making a semiconductor device comprising:

  • forming at least one double-barrier resonant tunneling diode (DBRTD) byforming a first doped semiconductor layer,forming a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions,forming an intrinsic semiconductor layer on the first barrier layer,forming a second barrier layer on the intrinsic semiconductor layer, andforming a second doped semiconductor layer on the second barrier layer.

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