Method for making a semiconductor device including a resonant tunneling diode structure having a superlattice
First Claim
1. A method for making a semiconductor device comprising:
- forming at least one double-barrier resonant tunneling diode (DBRTD) byforming a first doped semiconductor layer,forming a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions,forming an intrinsic semiconductor layer on the first barrier layer,forming a second barrier layer on the intrinsic semiconductor layer, andforming a second doped semiconductor layer on the second barrier layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for making a semiconductor device may include forming at least one double-barrier resonant tunneling diode (DBRTD) by forming a first doped semiconductor layer, and forming a first barrier layer on the first doped semiconductor layer and including a superlattice. The superlattice may include stacked groups of layers, each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming an intrinsic semiconductor layer on the first barrier layer, forming a second barrier layer on the intrinsic semiconductor layer, and forming a second doped semiconductor layer on the second superlattice layer.
-
Citations
22 Claims
-
1. A method for making a semiconductor device comprising:
forming at least one double-barrier resonant tunneling diode (DBRTD) by forming a first doped semiconductor layer, forming a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, forming an intrinsic semiconductor layer on the first barrier layer, forming a second barrier layer on the intrinsic semiconductor layer, and forming a second doped semiconductor layer on the second barrier layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
11. A method for making a semiconductor device comprising:
-
forming at least one double-barrier resonant tunneling diode (DBRTD) by forming a first doped semiconductor layer, forming a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions, forming an intrinsic semiconductor layer on the first barrier layer, forming a second barrier layer on the intrinsic semiconductor, the second barrier layer comprising a second superlattice, the second superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions and forming a second doped semiconductor layer on the second barrier layer. - View Dependent Claims (12, 13, 14, 15, 16)
-
-
17. A method for making a semiconductor device comprising:
forming at least one double-barrier resonant tunneling diode (DBRTD) by forming a first doped semiconductor layer, forming a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions, forming an intrinsic semiconductor layer on the first barrier layer, forming a second barrier layer on the intrinsic semiconductor layer comprising an oxide layer, and forming a second doped semiconductor layer on the second barrier layer. - View Dependent Claims (18, 19, 20, 21, 22)
Specification