Semiconductor device, base, and method for manufacturing same

• US 10,249,804 B2
• Filed: 07/17/2017
• Issued: 04/02/2019
• Est. Priority Date: 07/19/2016
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Shioji, Shuji
• Primary Examiner(s): Nguyen, Niki H
• Application Number:
  US15/651,679
• Publication Number:
  US 20180026169A1
• Time in Patent Office: 624 Days
• Field of Search: 257 81, 257 82, 257 98-100, 257116, 257117, 257432-437, 257749, 257E33056-E33059, 257E25032, 257457, 257459, 438 25- 28
• CPC Class Codes: C23C 14/083 of refractory metals or yttrium
• CPC Class Codes: C23C 14/10 Glass or silica
• CPC Class Codes: C23C 14/165 by cathodic sputtering
• CPC Class Codes: C23C 14/24 Vacuum evaporation
• CPC Class Codes: C23C 14/3464 using more than one target C23C14/56 takes precedence
• CPC Class Codes: C23C 18/42 Coating with noble metals
• CPC Class Codes: C25D 7/12 Semiconductors
• CPC Class Codes: C25D 9/04 with inorganic materials
• CPC Class Codes: G02B 5/0816 Multilayer mirrors, i.e. having two or more reflecting layers G02B5/0883, G02B5/0891 take precedence
• CPC Class Codes: G02B 5/0858 the reflecting layers comprising a single metallic layer with one or more dielectric layers
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A semiconductor device includes a base and a semiconductor element disposed on the base. The base includes: a base member, a reflective film located above the base member, the reflective film containing silver as a major component and containing particles formed of at least one material selected from the group consisting of an oxide, a nitride, and a carbide; and a dielectric multilayered film located above the reflective film.

Claims

1. A semiconductor device comprising:

a base comprising;

a base member,

a reflective film located above the base member, the reflective film containing silver as a major component and containing particles formed of at least one material selected from the group consisting of an oxide, a nitride, and a carbide, and

a distributed Bragg reflector film, a portion of which contacts an upper surface of the reflective film; and

a semiconductor element disposed on the base.

2. The semiconductor device according to claim 1, wherein a content of the particles in the reflective film is at least 0.01% by mass and at most 5% by mass with respect to a total mass of the reflective film.

3. The semiconductor device according to claim 1, wherein the particles are in contact with the distributed Bragg reflector film or distributed near a surface of the reflective film closer to the distributed Bragg reflector film.

4. The semiconductor device according to claim 1, wherein the particles are dispersed throughout the reflective film.

5. The semiconductor device according to claim 1, wherein the particles are unevenly distributed and concentrated at or near an upper surface of the reflective film.

6. The semiconductor device according to claim 1, wherein the particles contained in the reflective film are formed of at least one material selected from the group consisting of Ga₂O₃, Nb₂O₅, and HfO₂.

7. The semiconductor device according to claim 1, wherein:

the distributed Bragg reflector film comprises two or more types of films each containing an oxide or nitride of at least one element selected from the group consisting of Si, Ti, Zr, Nb, Ta, and Al as a major component, and

the two or more types of films have different refractive indices from one another.

8. The semiconductor device according to claim 1, wherein the semiconductor element is a semiconductor light emitting element.

21. The semiconductor device according to claim 1, further comprising:

an adhesive disposed on the base,

wherein the semiconductor element is disposed on the base via the adhesive.

23. The semiconductor device according to claim 1, wherein, in a plan view of the semiconductor device, a portion of an upper surface of the distributed Bragg reflector film is located outside an area of the semiconductor element.

9. A base comprising:

a base member;

a reflective film located above the base member, the reflective film containing silver as a major component and containing particles formed of at least one material selected from the group consisting of an oxide, a nitride, and a carbide; and

a distributed Bragg reflector film, a portion of which contacts an upper surface of the reflective film.

10. A method for manufacturing a semiconductor device, the method comprising steps of:

forming a base, which comprises;

forming a reflective film on a base member, the reflective film containing silver as a major component and containing particles formed of at least one material selected from the group consisting of an oxide, a nitride, and a carbide, and

forming a distributed Bragg reflector film, a portion of which contacts an upper surface of the reflective film, and

mounting a semiconductor element on the base.

11. The method according to claim 10, wherein the step of forming the reflective film comprises forming the reflective film by electroplating, electroless plating, sputtering, or vapor deposition.

12. The method according to claim 10, wherein the step of forming the reflective film comprises:

simultaneous sputtering using a silver target and a target of said at least one material selected from the group consisting of an oxide, a nitride, and a carbide;

sputtering using an alloy target containing silver and said at least one material selected from the group consisting of an oxide, a nitride, and a carbide;

or

vapor deposition using an alloy containing silver and said at least one material selected from the group consisting of an oxide, a nitride, and a carbide as a deposition material.

13. The method according to claim 10, wherein the step of forming a reflective film comprises incorporating the particles into the reflective film such that the particles are exposed at an upper surface of the reflective film or the particles are distributed near the upper surface of the reflective film.

14. The method according to claim 10, wherein the particles are dispersed throughout the reflective film.

15. The method according to claim 10, wherein the particles are unevenly distributed and concentrated at or near an upper surface of the reflective film.

16. The method according to claim 10, wherein a content of the particles in the reflective film is at least 0.01% by mass and at most 5% by mass with respect to a total mass of the reflective film.

17. The method according to claim 10, wherein the particles contained in the reflective film are formed of at least one material selected from the group consisting of Ga₂O₃, Nb₂O₅, and HfO₂.

18. The method according to claim 10, wherein:

the distributed Bragg reflector film is made by stacking two or more types of films each containing an oxide or nitride of at least one element selected from the group consisting of Si, Ti, Zr, Nb, Ta, and Al as a major component, and

the two or more types of films have different refractive indices from one another.

19. The method according to claim 10, wherein the semiconductor element is a semiconductor light emitting element.

22. The method according to claim 10, further comprising:

before the step of mounting the semiconductor element on the base, forming an adhesive on the base,

wherein, in the step of mounting the semiconductor element on the base, the semiconductor element is mounted on the base via the adhesive.

24. The method according to claim 10, wherein, in a plan view of the semiconductor device, a portion of an upper surface of the distributed Bragg reflector film is located outside an area of the semiconductor element.

20. A method for manufacturing a base, the method comprising the steps of:

forming a reflective film on a base member, the reflective film containing silver as a major component and containing particles formed of at least one material selected from the group consisting of an oxide, a nitride, and a carbide, and

forming a distributed Bragg reflector film, a portion of which contacts an upper surface of the reflective film.