Voltage detection circuit

• US 10,250,206 B2
• Filed: 10/12/2017
• Issued: 04/02/2019
• Est. Priority Date: 11/07/2016
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Honda, Kazutaka
• Primary Examiner(s): Nguyen, Tung X
• Application Number:
  US15/730,918
• Publication Number:
  US 20180131337A1
• Time in Patent Office: 537 Days
• CPC Class Codes: G01R 1/20 Modifications of basic electric elements for use in electric measuring instruments; Structural combinations of such elements with such instruments
• CPC Class Codes: G01R 19/0053 Noise discrimination; Analog sampling; Measuring transients measuring characteristics of individual pulses G01R29/02; digital sampling G01R19/2509; measuring noise figure G01R29/26
• CPC Class Codes: G01R 19/0084 measuring voltage only all subgroups of G01R19/00 take precedence
• CPC Class Codes: G01R 19/04 Measuring peak values or amplitude or envelope of ac or of pulses
• CPC Class Codes: G01R 19/16519 using FET's
• CPC Class Codes: H03F 2203/45514 the FBC comprising one or more switched capacitors, and being coupled between the LC and the IC
• CPC Class Codes: H03F 2203/45551 the IC comprising one or more switched capacitors
• CPC Class Codes: H03F 3/45179 using MOSFET transistors as the active amplifying circuit H03F3/45278 takes precedence
• CPC Class Codes: H03F 3/45475 using IC blocks as the active amplifying circuit
• CPC Class Codes: H03K 17/002 Switching arrangements with several input- or output terminals code converters H03M5/00, H03M7/00
• CPC Class Codes: H03K 5/08 by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding H03K5/07 takes precedence; comparing one pulse with another H03K5/22; providing a determined threshold for switching H03K17/30

Abstract

A voltage detection circuit includes two detection capacitors, which are paired and configured differentially, first to third detection switches, a drive part, a minimum selector and a maximum selector. The first detection switch is formed of a pMOS transistor, which opens and closes a path between one of the detection capacitors and an input node. The second detection switch is formed of an nMOS transistor, which opens and closes a path between the other of the detection capacitors and an input node. The third detection switch is formed of a series circuit of a pMOS transistor and an nMOS transistor, which open and close a path between two detection capacitors. The driving part turns on and off complementarily between the first and second switches and the third detection switch. The minimum selector applies a lower one of voltages of the input nodes as a substrate potential of the nMOS transistor. The maximum selector applies a higher one of the voltages of the input nodes as a substrate potential of the pMOS transistor.

Claims

1. A voltage detection circuit of a differential configuration for sampling voltages of two input nodes and detecting a differential voltage between sampled voltages, the voltage detection circuit comprising:

two detection capacitors paired in a differential configuration;

a first detection switch formed of a P-channel type MOS transistor for opening and closing a path between one of the two detection capacitors and one of the two input nodes;

a second detection switch formed of an N-channel type MOS transistor for opening and closing a path between an other of the two capacitors and an other of the two input nodes;

a third detection switch formed of at least one of a P-channel type MOS transistor and an N-channel type MOS transistor for opening and closing a path between the two detection capacitors;

a driving part for driving the first detection switch and the second detection switch complementarily to the third detection switch such that the first detection switch and the second detection switch are turned on and off when the third detection switch is turned off and on, respectively;

a minimum selector for selecting a lower one of the voltages of the two input nodes and applying a selected voltage as a substrate potential of the N-channel type MOS transistor; and

a maximum selector for selecting a higher one of the voltages of the two input nodes and applying a selected voltage as a substrate potential of the P-channel type MOS transistor.

2. The voltage detection circuit according to claim 1, further comprising:

a potential fixing part for fixing the substrate potential of the P-channel type MOS transistor and the substrate potential of the N-channel type MOS transistor in a predetermined potential relation in an unstable operation region, in which the minimum selector and the maximum selector are unable to operate normally in correspondence to a difference between the voltages of the two input nodes.

3. The voltage detection circuit according to claim 2, wherein:

the potential fixing part includes at least one of a diode and a Zener diode, which fixes the substrate potential of the P-channel type MOS transistor to be lower than the substrate potential of the N-channel type MOS transistor by a predetermine voltage amount in the unstable operation region.

4. The voltage detection circuit according to claim 1, wherein:

the third detection switch includes a series connection of the P-channel type MOS transistor and the N-channel type MOS transistor.

5. The voltage detection circuit according to claim 1, wherein:

the driving part drives the first detection switch, the second detection switch and the third detection switch through capacitors.

6. The voltage detection circuit according to claim 1, further comprising:

a first dummy switch, a second dummy switch and a third dummy switch, which are configured similarly to the first detection switch, the second detection switch and the third detection switch, respectively,

wherein the driving part further drives the first dummy switch, the second dummy switch and the third dummy switch.

7. The voltage detection circuit according to claim 6, wherein:

the driving part drives the first dummy switch, the second dummy switch and the third dummy switch through capacitors.

8. A voltage detection circuit of a differential configuration for sampling voltages of two input nodes and detecting a differential voltage between sampled voltages, the voltage detection circuit comprising:

two detection capacitors paired in a differential configuration;

a first detection switch for opening and closing a path between one of the two detection capacitors and one of the two input nodes, the first detection switch including a series circuit of a P-channel type MOS transistor and an N-channel type MOS transistor;

a second detection switch for opening and closing a path between an other of the two capacitors and an other of the two input nodes, the second detection switch including a series circuit of a P-channel type MOS transistor and an N-channel type MOS transistor;

a third detection switch for opening and closing a path between the one of the two detection capacitors and the other of the two input nodes, the third detection switch including a series circuit of a P-channel type MOS transistor and an N-channel type MOS transistor;

a fourth detection switch for opening and closing a path between the other of the two detection capacitors and the one of the two input nodes, the fourth detection switch including a series circuit of a P-channel type MOS transistor and an N-channel type MOS transistor;

a driving part for driving the first detection switch, the second detection switch, the third detection switch and the fourth detection switch thereby to turn on and off the first detection switch and the second detection switch and to turn on and off the third detection switch and the fourth detection switch complementarily;

a minimum selector for selecting a lower one of the voltages of the two input nodes and applying a selected voltage as a substrate potential of the N-channel type MOS transistor; and

a maximum selector for selecting a higher one of the voltages of the two input nodes and applying a selected voltage as a substrate potential of the P-channel type MOS transistor.

9. The voltage detection circuit according to claim 8, further comprising:

a potential fixing part for fixing the substrate potential of the P-channel type MOS transistor and the substrate potential of the N-channel type MOS transistor in a predetermined potential relation in an unstable operation region, in which the minimum selector and the maximum selector do not operate normally relative to a difference between the voltages of the two input nodes.

10. The voltage detection circuit according to claim 9, wherein:

the potential fixing part includes at least one of a diode and a Zener diode, which fixes the substrate potential of the P-channel type MOS transistor to be lower than the substrate potential of the N-channel type MOS transistor by a predetermined voltage in the unstable operation region.

11. The voltage detection circuit according to claim 8, wherein:

the driving part drives the first detection switch, the second detection switch, the third detection switch and the fourth detection switch through capacitors, respectively.