Semiconductor device and circuit arrangement using the same
First Claim
Patent Images
1. A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
an epitaxial layer of the first conductivity type in contact with a surface of the semiconductor substrate;
first and second regions determined with a certain distance in the epitaxial layer;
a first switching element that is formed in the first region and is electrically coupled to the semiconductor substrate;
a second switching element that is formed in the second region and is electrically coupled to the semiconductor substrate so as to be coupled in series to the first switching element,the first switching element including;
a first electrode formed in a first trench via a first insulating film, the first trench being formed over the epitaxial layer;
a first-impurity-region first part of the second conductivity type in the epitaxial layer, the first-impurity-region first part being formed with a first thickness in contact with the first insulating film at a smaller depth than a bottom of the first trench; and
a second-impurity-region first part of the first conductivity type in the epitaxial layer, the second-impurity-region first part being formed in contact with the first-impurity-region first part at a smaller depth than the first-impurity-region first part,the second switching element including;
a second electrode formed in a second trench via a second insulating film, the second trench being formed over the epitaxial layer;
a first-impurity-region second part of the second conductivity type in the epitaxial layer, the first-impurity-region second part being formed with a second thickness in contact with the second insulating film at a smaller depth than a bottom of the second trench;
a second-impurity-region second part of the first conductivity type in the epitaxial layer, the second-impurity-region second part being formed in contact with the first-impurity-region second part at a smaller depth than the first-impurity-region second part; and
columns of the second conductivity type, the columns being extended from the first-impurity-region second part toward the semiconductor substrate and away from both the second insulating film and the second electrode.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device and a circuit arrangement are provided so as to reduce an on resistance. A first power MOS transistor and a second power MOS transistor are formed on the same semiconductor substrate. A first power MOS transistor formed in a first element formation region has a columnless structure including no columns. The second power MOS transistor formed in a second element formation region has an SJ structure including columns.
-
Citations
9 Claims
-
1. A semiconductor device comprising:
-
a semiconductor substrate of a first conductivity type; an epitaxial layer of the first conductivity type in contact with a surface of the semiconductor substrate; first and second regions determined with a certain distance in the epitaxial layer; a first switching element that is formed in the first region and is electrically coupled to the semiconductor substrate; a second switching element that is formed in the second region and is electrically coupled to the semiconductor substrate so as to be coupled in series to the first switching element, the first switching element including; a first electrode formed in a first trench via a first insulating film, the first trench being formed over the epitaxial layer; a first-impurity-region first part of the second conductivity type in the epitaxial layer, the first-impurity-region first part being formed with a first thickness in contact with the first insulating film at a smaller depth than a bottom of the first trench; and a second-impurity-region first part of the first conductivity type in the epitaxial layer, the second-impurity-region first part being formed in contact with the first-impurity-region first part at a smaller depth than the first-impurity-region first part, the second switching element including; a second electrode formed in a second trench via a second insulating film, the second trench being formed over the epitaxial layer; a first-impurity-region second part of the second conductivity type in the epitaxial layer, the first-impurity-region second part being formed with a second thickness in contact with the second insulating film at a smaller depth than a bottom of the second trench; a second-impurity-region second part of the first conductivity type in the epitaxial layer, the second-impurity-region second part being formed in contact with the first-impurity-region second part at a smaller depth than the first-impurity-region second part; and columns of the second conductivity type, the columns being extended from the first-impurity-region second part toward the semiconductor substrate and away from both the second insulating film and the second electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
Specification