Semiconductor device with slotted backside metal for improving Q factor
First Claim
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1. A semiconductor device, comprising:
- a semiconductor substrate;
a winding structure formed on a top side the semiconductor substrate, wherein the winding structure comprises one or more metal lines winding with respect to a center of the winding structure; and
a first backside metal and a second backside metal formed under a backside of the semiconductor substrate;
wherein a hollow slot is formed between the first backside metal and the second backside metal, and a projection of the winding structure is within the hollow slot;
wherein the first backside metal and the second backside metal forms a ground-signal-ground (GSG) structure;
wherein an edge of the hollow slot is a distance from a projection result of an outmost metal line of the winding structure.
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Abstract
A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate; a winding structure formed on a top side the semiconductor substrate, wherein the winding structure comprises one or more metal lines winding with respect to a center of the winding structure; and a backside metal formed under a backside of the semiconductor substrate; wherein a hollow slot is formed within the backside metal, and a projection of the winding structure is within the hollow slot.
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Citations
19 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate; a winding structure formed on a top side the semiconductor substrate, wherein the winding structure comprises one or more metal lines winding with respect to a center of the winding structure; and a first backside metal and a second backside metal formed under a backside of the semiconductor substrate; wherein a hollow slot is formed between the first backside metal and the second backside metal, and a projection of the winding structure is within the hollow slot; wherein the first backside metal and the second backside metal forms a ground-signal-ground (GSG) structure; wherein an edge of the hollow slot is a distance from a projection result of an outmost metal line of the winding structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 17, 18, 19)
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15. A manufacturing method of a semiconductor device, comprising:
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forming a winding structure formed on a top side of a semiconductor substrate, wherein the winding structure comprises one or more metal lines winding with respect to a center of the winding structure, and the one or more metal lines are disposed in one or more metal layers; forming a first backside metal and a second backside metal under a backside of the semiconductor substrate; and forming a hollow slot between the first backside metal and the second backside metal, wherein a projection area of the winding structure is within the hollow slot, and an edge of the hollow slot is a distance from a projection result of an outmost metal line of the winding structure; wherein the first backside metal and the second backside metal forms a ground-signal-ground (GSG) structure. - View Dependent Claims (16)
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Specification