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Semiconductor device with slotted backside metal for improving Q factor

  • US 10,256,187 B2
  • Filed: 05/15/2017
  • Issued: 04/09/2019
  • Est. Priority Date: 05/15/2017
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate;

    a winding structure formed on a top side the semiconductor substrate, wherein the winding structure comprises one or more metal lines winding with respect to a center of the winding structure; and

    a first backside metal and a second backside metal formed under a backside of the semiconductor substrate;

    wherein a hollow slot is formed between the first backside metal and the second backside metal, and a projection of the winding structure is within the hollow slot;

    wherein the first backside metal and the second backside metal forms a ground-signal-ground (GSG) structure;

    wherein an edge of the hollow slot is a distance from a projection result of an outmost metal line of the winding structure.

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