Method of manufacturing semiconductor device

• US 10,256,291 B2
• Filed: 02/05/2015
• Issued: 04/09/2019
• Est. Priority Date: 07/17/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Miyanaga, Akiharu
• Primary Examiner(s): Hossain, Moazzam
• Assistant Examiner(s): Isaac, Stanetta
• Application Number:
  US14/614,970
• Publication Number:
  US 20150144947A1
• Time in Patent Office: 1,524 Days
• Field of Search: None
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An object is to provide a method for manufacturing a highly reliable semiconductor device including a transistor with stable electric characteristics. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode over a substrate having an insulating surface; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film; irradiating the oxide semiconductor film with an electromagnetic wave such as a microwave or a high frequency; forming a source electrode and a drain electrode over the oxide semiconductor film irradiated with the electromagnetic wave; and forming an oxide insulating film, which is in contact with part of the oxide semiconductor film, over the gate insulating film, the oxide semiconductor film, the source electrode, and the drain electrode.

Claims

1. A method of manufacturing a semiconductor device comprising the steps of:

forming an oxide semiconductor layer over a substrate; and

irradiating the oxide semiconductor layer with microwaves to reduce a concentration of hydrogen in the oxide semiconductor layer.

2. The method according to claim 1, wherein the oxide semiconductor layer comprises In, Ga, Zn and O.

3. The method according to claim 1, wherein the concentration of hydrogen in the oxide semiconductor layer after the step of irradiating is 5×

10¹⁹/cm³ or less.

4. The method according to claim 1, wherein the oxide semiconductor layer is irradiated with microwaves in an inert gas atmosphere.

5. A method of manufacturing a semiconductor device comprising the steps of:

forming an oxide semiconductor layer over a substrate;

placing the substrate in a treatment chamber;

supplying a gas to the treatment chamber; and

treating the oxide semiconductor layer by supplying microwaves to the gas in the treatment chamber to reduce a concentration of hydrogen in the oxide semiconductor layer,

wherein the gas is made into plasma by the microwaves.

6. The method according to claim 5, wherein the oxide semiconductor layer comprises In, Ga, Zn and O.

7. The method according to claim 5, wherein the concentration of hydrogen in the oxide semiconductor layer after the step of treating is 5×

10¹⁹/cm³ or less.

8. The method according to claim 5, wherein the gas is an inert gas.

9. A method of manufacturing a semiconductor device comprising the steps of:

forming an oxide semiconductor layer over a substrate;

forming a source electrode layer and a drain electrode layer, wherein a portion of the oxide semiconductor layer is exposed between the source electrode layer and the drain electrode layer; and

irradiating the oxide semiconductor layer with microwaves to reduce a concentration of hydrogen in the oxide semiconductor layer after forming the source electrode layer and the drain electrode layer.

10. The method according to claim 9, wherein the oxide semiconductor layer comprises In, Ga, Zn and O.

11. The method according to claim 9, wherein the concentration of hydrogen in the oxide semiconductor layer after the step of irradiating is 5×

10¹⁹/cm³ or less.

12. The method according to claim 9, wherein the oxide semiconductor layer is irradiated with microwaves in an inert gas atmosphere.