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High doped III-V source/drain junctions for field effect transistors

  • US 10,256,304 B2
  • Filed: 02/07/2018
  • Issued: 04/09/2019
  • Est. Priority Date: 07/29/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a gate arranged on a substrate;

    a pair of epitaxial contacts comprising a III-V material arranged on opposing sides of the gate;

    a channel region arranged underneath the gate and between the pair of epitaxial contacts, the channel region comprising a discrete undoped III-V material region between doped III V material regions; and

    a buffer layer between the channel region and the substrate, the buffer layer comprising copper doped silicon.

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