Oxide thin film transistor and method of fabricating the same
First Claim
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1. A thin film transistor, comprising:
- an active layer of an oxide semiconductor;
source and drain electrodes on the active layer, wherein the source and drain electrodes comprise first source and drain electrodes of a second conductive film on the active layer, and second source and drain electrodes of a third conductive film on the first source and drain electrodes;
a gate insulating layer on the active layer between the source and drain electrodes;
a gate electrode of a first conductive film on the gate insulating layer;
an in-situ protection layer of an oxide of the second conductive film on the active layer and the gate electrode; and
a passivation layer on the in-situ protection layer, the passivation layer directly contacting the third conductive film and the in-situ protection layer that are located over the active layer of the oxide semiconductor.
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Abstract
The present disclosure relates to an oxide thin film transistor and a fabricating method thereof. In the oxide thin film transistor, which uses amorphous zinc oxide (ZnO) semiconductor as an active layer, damage to the oxide semiconductor due to dry etching may be minimized by forming source and drain electrodes in a multilayered structure having at least two layers, and improving stability and reliability of a device by employing a dual passivation layer structure, which includes a lower layer for overcoming an oxygen deficiency and an upper layer to minimize effects of an external environment on the multilayered source and drain electrodes.
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8 Claims
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1. A thin film transistor, comprising:
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an active layer of an oxide semiconductor; source and drain electrodes on the active layer, wherein the source and drain electrodes comprise first source and drain electrodes of a second conductive film on the active layer, and second source and drain electrodes of a third conductive film on the first source and drain electrodes; a gate insulating layer on the active layer between the source and drain electrodes; a gate electrode of a first conductive film on the gate insulating layer; an in-situ protection layer of an oxide of the second conductive film on the active layer and the gate electrode; and a passivation layer on the in-situ protection layer, the passivation layer directly contacting the third conductive film and the in-situ protection layer that are located over the active layer of the oxide semiconductor. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A thin film transistor, comprising:
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an active layer of an oxide semiconductor; source and drain electrodes on the active layer, wherein the source and drain electrodes comprise first source and drain electrodes of a second conductive film on the active layer, and second source and drain electrodes of a third conductive film on the first source and drain electrodes; a gate insulating layer on the active layer between the source and drain electrodes; a gate electrode of a first conductive film on the gate insulating layer; an in-situ protection layer of an oxide of the second conductive film on the active layer and the gate electrode; a lower passivation layer on the in-situ protection layer, the lower passivation layer directly contacting the third conductive film and the in-situ protection layer that are located over the active layer of the oxide semiconductor; and an upper passivation layer on the lower passivation layer.
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Specification