Method for manufacturing nitride semiconductor substrate
First Claim
1. A method for manufacturing a nitride semiconductor substrate, the method comprising:
- a step of placing a semiconductor substrate which includes a sapphire substrate and a precursor of an aluminum nitride (AlN) buffer layer in an annealing furnace such that the precursor and a cover member face each other with at most a 0.5-mm spacing therebetween to inhibit dissociation of an AlN component due to heating the semiconductor substrate, the precursor being formed on a surface of the sapphire substrate and including AlN grains; and
a step of annealing the semiconductor substrate in the annealing furnace in an inert gas atmosphere for at least 20 minutes at a temperature of the semiconductor substrate in a range from 1600°
C. to 1750°
C., whereina full width at half maximum of an X-ray rocking curve of a (10-12) plane of the annealed semiconductor substrate is less than or equal to 1000 arcsec.
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Abstract
A method for manufacturing a nitride semiconductor substrate includes: a preparation step of preparing a sapphire substrate; and a buffer layer forming step of forming an AlN buffer layer on the sapphire substrate, wherein the buffer layer forming step includes: a group III nitride semiconductor forming step of forming a precursor of an AlN buffer layer on the sapphire substrate; and an annealing step of annealing the sapphire substrate on which the precursor of the AlN buffer layer is formed in a gas-tight state in which a principal surface of the precursor of the AlN buffer layer is covered with a cover member (such as a sapphire substrate) for inhibiting a component of the group III nitride semiconductor from dissociating from the principal surface of the formed precursor of the AlN buffer layer.
9 Citations
14 Claims
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1. A method for manufacturing a nitride semiconductor substrate, the method comprising:
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a step of placing a semiconductor substrate which includes a sapphire substrate and a precursor of an aluminum nitride (AlN) buffer layer in an annealing furnace such that the precursor and a cover member face each other with at most a 0.5-mm spacing therebetween to inhibit dissociation of an AlN component due to heating the semiconductor substrate, the precursor being formed on a surface of the sapphire substrate and including AlN grains; and a step of annealing the semiconductor substrate in the annealing furnace in an inert gas atmosphere for at least 20 minutes at a temperature of the semiconductor substrate in a range from 1600°
C. to 1750°
C., whereina full width at half maximum of an X-ray rocking curve of a (10-12) plane of the annealed semiconductor substrate is less than or equal to 1000 arcsec. - View Dependent Claims (2, 3)
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4. A method for manufacturing a nitride semiconductor substrate, the method comprising:
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a preparation step of preparing a substrate which includes at least one of sapphire, silicon carbide, and aluminum nitride in a container which is coverable with a lid while the substrate is stored in the container, and includes, in the container, a substrate holder which limits movement of the substrate from a periphery side of the substrate; a buffer layer forming step of forming, on the substrate, a precursor of a buffer layer which includes a group III nitride semiconductor represented by AlxGayIn(1-x-y)N, where 0≤
x≤
1, 0≤
y≤
1, and (x+y)≤
1, in the container in an uncovered state;a step of creating a gas-tight state in the container by covering the container with the lid after forming the precursor of the buffer layer; and an annealing step of annealing the nitride semiconductor substrate on which the precursor of the buffer layer which includes the group III nitride semiconductor is formed through the buffer layer forming step, in an inert gas atmosphere and at a temperature higher than a temperature in the buffer layer forming step.
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5. A method for manufacturing a nitride semiconductor substrate, the method comprising:
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a step of placing, in an annealing furnace, a semiconductor substrate which includes;
a substrate which includes one of sapphire, silicon carbide, and aluminum nitride; and
a precursor of a buffer layer which includes a group III nitride semiconductor represented by AlxGayIn(1-x-y)N, where 0≤
x≤
1, 0≤
y≤
1, and (x+y)≤
1, such that the precursor and a cover member face each other with at most a 0.5-mm spacing therebetween to inhibit dissociation of a component of the group III nitride semiconductor due to heating the semiconductor substrate, the precursor being formed on a surface of the substrate and including group III nitride semiconductor grains; anda step of annealing the semiconductor substrate in the annealing furnace in an inert gas atmosphere for at least 20 minutes at a temperature of the semiconductor substrate in a range from 1400°
C. to 1750°
C. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12)
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13. A method for manufacturing a nitride semiconductor substrate, the method comprising:
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a step of placing, in an annealing furnace, a semiconductor substrate which includes;
a substrate which includes one of sapphire, silicon carbide, and aluminum nitride; and
a precursor of a buffer layer which includes a group III nitride semiconductor represented by AlxGayIn(1-x-y)N, where 0≤
x≤
1, 0≤
y≤
1, and (x+y)≤
1, such that the precursor and a base face each other to inhibit dissociation of a component of the group III nitride semiconductor due to heating the semiconductor substrate, the precursor being formed on a surface of the substrate and including group III nitride semiconductor grains; anda step of annealing the semiconductor substrate in the annealing furnace for at least 20 minutes at a temperature of the semiconductor substrate in a range from 1400°
C. to 1750°
C. in an inert gas atmosphere, whereina full width at half maximum of an X-ray rocking curve of a (10-12) plane of the annealed semiconductor substrate is less than or equal to 1000 arcsec. - View Dependent Claims (14)
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Specification