Arrangements for magnetic field sensors to cancel offset variations

• US 10,260,905 B2
• Filed: 06/08/2016
• Issued: 04/16/2019
• Est. Priority Date: 06/08/2016
• Status: Active Grant

• Current Assignee: Allegro Microsystems Incorporated (Sanken Electric Company Limited)
• Original Assignee: Allegro Microsystems Incorporated (Sanken Electric Company Limited)
• Inventors: David, Paul A., Shoemaker, Eric G., Eagen, Jeffrey
• Primary Examiner(s): Rodak, Lee E
• Application Number:
  US15/176,655
• Publication Number:
  US 20170356760A1
• Time in Patent Office: 1,042 Days
• Field of Search: 32420711, 32420724, 32420725, 32420726, 3242072, 32420721, 32420722, 324 3, 32420723
• CPC Class Codes: G01D 2205/771 Toothed profiles
• CPC Class Codes: G01D 2205/774 Profiles with a discontinuity, e.g. edge or stepped profile
• CPC Class Codes: G01D 2205/776 Cam-shaped profiles
• CPC Class Codes: G01D 5/142 using Hall-effect devices measuring magnetic variables using Hall-effect or other galvanomagnetic devices G01R33/06
• CPC Class Codes: G01D 5/147 influenced by the movement of a third element, the position of Hall device and the source of magnetic field being fixed in respect to each other
• CPC Class Codes: G01D 5/16 by varying resistance

Abstract

A magnetic field sensor can sense a movement of an object along a path. A movement line is tangent to the path. The magnetic field sensor can include a semiconductor substrate. The semiconductor substrate can have first and second orthogonal axes orthogonal to each other on the first surface of the substrate. A projection of the movement line onto a surface of the semiconductor substrate is only substantially parallel to the first orthogonal axis. The magnetic field sensor can also include first, second, third, and fourth magnetic field sensing elements disposed on the substrate. The first and second magnetic field sensing elements have maximum response axes parallel to the first orthogonal axis and the second and fourth magnetic field sensing elements have maximum response axes parallel to the second orthogonal axis. Signals generated by the second and fourth magnetic field sensing elements can be used as reference signals.

Claims

1. A magnetic field sensor for sensing a movement of an object operable to move along one and only one path, wherein a movement line is tangent to the one and only one path, such that the movement line passes through two infinitely close points on the one and only one path, the magnetic field sensor comprising:

a magnet, the magnet comprising a magnet surface, a north pole, a south pole, and a magnet axis passing through the north pole and the south pole;

a semiconductor substrate proximate to the magnet and at a position between the object and the magnet surface, the semiconductor substrate having first and second surfaces opposing each other, the magnet axis substantially perpendicular to the first surface of the semiconductor substrate, the semiconductor substrate having first and second orthogonal axes orthogonal to each other on the first surface of the substrate intersecting at a substrate point on the first surface of the substrate, wherein the magnet axis intersects the substrate point, wherein, for any movement line tangent to the one and only one path, a projection of the any movement line tangent to the one and only one path onto the first surface of the semiconductor substrate is substantially parallel to the first orthogonal axis on the first surface of the substrate;

a first magnetic field sensing element disposed on or under the first surface of the semiconductor substrate, wherein the first magnetic field sensing element comprises an axis of maximum sensitivity substantially parallel to the first surface of the substrate and substantially parallel to the first orthogonal axis;

a second magnetic field sensing element disposed on or under the first surface of the semiconductor substrate, wherein the second magnetic field sensing element comprises an axis of maximum sensitivity substantially parallel to the first surface of the substrate and substantially parallel to the second orthogonal axis, wherein, for any movement of the object, the second magnetic field sensing element is substantially less responsive to the movement than is the first magnetic field sensing element;

a third magnetic field sensing element disposed on or under the first surface of the semiconductor substrate, wherein the third magnetic field sensing element comprises an axis of maximum sensitivity substantially parallel to the first surface of the substrate and substantially parallel to the first orthogonal axis; and

a fourth magnetic field sensing element disposed on or under the first surface of the semiconductor substrate, wherein the fourth magnetic field sensing element comprising an axis of maximum sensitivity substantially parallel to the first surface of the substrate and substantially parallel to the second orthogonal axis, wherein, for any movement of the object, the fourth magnetic field sensing element is substantially less responsive to the movement than is the third magnetic field sensing element.

2. The magnetic field sensor of claim 1, wherein the first, second, third, and fourth magnetic field sensing elements comprise vertical Hall effect elements.

3. The magnetic field sensor of claim 1, wherein the first, second, third, and fourth magnetic field sensing elements comprise magnetoresistance elements.

4. The magnetic field sensor of claim 1, wherein centers of the first and third magnetic field sensing elements are disposed along the first orthogonal axis and equidistant from the substrate point.

5. The magnetic field sensor of claim 4, wherein the centers of second and fourth magnetic field sensing elements are disposed along the second orthogonal axis and equidistant from the substrate point.

6. The magnetic field sensor of claim 1, further comprising:

a first electronic circuit channel coupled to receive a first signal generated by the first magnetic field sensing element and coupled to receive a second signal generated by the second magnetic field sensing element, the first electronic circuit channel operable to generate a first difference signal as a difference of the first and second signals, the first electronic circuit channel operable to generate the first difference signal having a first phase; and

a second electronic circuit channel coupled to receive a third signal generated by the third magnetic field sensing element and coupled to receive a fourth signal generated by the fourth magnetic field sensing element, the second electronic circuit channel operable to generate a second difference signal as a difference of the third and fourth signals, the second electronic circuit channel operable to generate the second difference signal having a second phase different from the first phase, wherein a sign of a phase difference between the first phase and the second phase is indicative of a direction of the movement of the object.

7. The magnetic field sensor of claim 1, further comprising:

a first electronic circuit channel coupled to receive a first signal generated by the first magnetic field sensing element and coupled to receive a second signal generated by the second magnetic field sensing element, the first electronic circuit channel operable to generate a first difference signal as a difference of the first and second signals, wherein the second signal generated by the second magnetic field sensing element operates as a first reference signal being less responsive to the magnetic field for any movement of the object than the first signal but having the same DC response to temperature as the first signal such that the first difference signal has a reduced DC voltage drift with temperature; and

a second electronic circuit channel coupled to receive a third signal generated by the third magnetic field sensing element and coupled to receive a fourth signal generated by the fourth magnetic field sensing element, the second electronic circuit channel operable to generate a second difference signal as a difference of the third and fourth signals, wherein the fourth signal generated by the fourth magnetic field sensing element operates as a second reference signal being less responsive to the magnetic field for any movement of the object than the third signal but having the same DC response to temperature as the third signal such that the second difference signal has a reduced DC voltage drift with temperature.

8. The magnetic field sensor of claim 1, wherein the first, second, third, and fourth magnetic field sensing elements are disposed away from the substrate point.

9. The magnetic field sensor of claim 1, wherein the object comprises a ferromagnetic object and has no permanent magnetism.

10. The magnetic field sensor of claim 9, wherein the magnet forms a back-biased arrangement with the first, second, third, and fourth magnetic field sensing elements such that the movement of the object results in respective changes of angles of the magnetic field generated by the magnet at the first, second, third, and fourth magnetic field sensing elements.

11. The magnetic field sensor of claim 9, wherein the ferromagnetic object comprises a gear tooth on a gear operable to rotate about a gear axis substantially perpendicular to any movement line tangent to the one and only one path.