Semiconductor device having temperature sensor circuit that detects a temperature range upper limit value and a temperature range lower limit value
First Claim
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1. A device that operates over a plurality of predetermined temperature ranges, comprising:
- at least one subthreshold operating circuit including at least one first insulated gate field effect device (IGFET) having a first conductivity type;
wherein the at least one first IGFET having the first conductivity type is coupled to receive a first back body bias potential that changes according to the temperature range in which the device is operating;
whereinthe at least one subthreshold operating circuit operates at a power supply potential below a threshold voltage of the at least first one first IGFET.
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Abstract
A device that operates over a plurality of predetermined temperature ranges that can include a subthreshold operating circuit including a first insulated gate field effect device (IGFET) having a first conductivity type. The first IGFET can be coupled to receive a first back body bias potential that changes according to the temperature range in which the device is operating. The subthreshold operating circuit can operate at a power supply potential below a threshold voltage of the first IGFET.
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Citations
20 Claims
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1. A device that operates over a plurality of predetermined temperature ranges, comprising:
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at least one subthreshold operating circuit including at least one first insulated gate field effect device (IGFET) having a first conductivity type; wherein the at least one first IGFET having the first conductivity type is coupled to receive a first back body bias potential that changes according to the temperature range in which the device is operating;
whereinthe at least one subthreshold operating circuit operates at a power supply potential below a threshold voltage of the at least first one first IGFET. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A device, comprising:
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at least one subthreshold operating circuit including at least one first insulated gate field effect device (IGFET) having a first conductivity type wherein the at least one first IGFET is coupled to receive a first back body bias potential having a first potential when the device is operating within a first temperature range and a second potential when the device is operating within a second temperature range;
whereinthe at least one subthreshold operating circuit operates at a power supply potential below a threshold voltage of the at least first one first IGFET. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification