Electrostatic sensing device
First Claim
1. An electrostatic sensing device, comprising:
- an electrostatic sensing module comprising two first electrodes and a first electrostatic sensing element, wherein the two first electrodes are separately located on and electrically connected to two opposite ends of the first electrostatic sensing element, and the first electrostatic sensing element is one-dimensional semiconducting linear structure with a diameter less than 100 nanometers; and
a control unit electrically connected to the electrostatic sensing module, wherein the control unit electrically is configured to apply a direct voltage to the first electrostatic sensing element and measure a resistance change between the two opposite ends of the first electrostatic sensing element which is generated by static electricity of an object near and without touching the one-dimensional semiconducting linear structure.
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Abstract
An electrostatic sensing device comprises an electrostatic sensing module and a control unit electrically connected to the electrostatic sensing module. The electrostatic sensing module comprises a first electrostatic sensing element comprising opposite ends, and two first electrodes. The two first electrodes are separately located on and electrically connected to the two opposite ends of the first electrostatic sensing element. The first electrostatic sensing element is one-dimensional semiconducting linear structure with a diameter less than 100 nanometers. The control unit electrically is configured to apply a direct voltage to the first electrostatic sensing element and measure a current/resistance of the first electrostatic sensing element.
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Citations
20 Claims
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1. An electrostatic sensing device, comprising:
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an electrostatic sensing module comprising two first electrodes and a first electrostatic sensing element, wherein the two first electrodes are separately located on and electrically connected to two opposite ends of the first electrostatic sensing element, and the first electrostatic sensing element is one-dimensional semiconducting linear structure with a diameter less than 100 nanometers; and a control unit electrically connected to the electrostatic sensing module, wherein the control unit electrically is configured to apply a direct voltage to the first electrostatic sensing element and measure a resistance change between the two opposite ends of the first electrostatic sensing element which is generated by static electricity of an object near and without touching the one-dimensional semiconducting linear structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 17, 18)
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9. An electrostatic sensing device, comprising:
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an electrostatic sensing module comprising a plurality of first electrostatic sensing elements spaced and substantially parallel to each other in same interval on a same plane, and a plurality of first electrodes;
wherein each two first electrodes of the plurality of first electrodes are separately located on and electrically connected to two opposite sides of one of the plurality of first electrostatic sensing elements, and each of the plurality of first electrostatic sensing elements is one-dimensional semiconducting linear structure with a diameter less than 100 nanometers; anda control unit electrically connected to the electrostatic sensing module, wherein the control unit electrically is configured to apply a direct voltage to the plurality of first electrostatic sensing elements and measure a resistance change between the two opposite sides of each of the plurality of first electrostatic sensing elements which is generated by static electricity of an object near and without touching the one-dimensional semiconducting linear structure. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 19, 20)
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Specification