Plasma monitoring device

• US 10,262,841 B2
• Filed: 01/10/2017
• Issued: 04/16/2019
• Est. Priority Date: 07/11/2016
• Status: Active Grant

• Current Assignee: Nanotech Inc., Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Moon, Pyung, Kang, Sung Ho, Kim, Ki Chul, Kim, Un Ki, Lee, Yong Hun, Lee, Jae Hee, Song, Yong Seok, Park, Hang Mook, Oh, Je Hoon
• Primary Examiner(s): Ferguson, Dion
• Assistant Examiner(s): Sathiraju, Srinivas
• Application Number:
  US15/402,749
• Publication Number:
  US 20180012737A1
• Time in Patent Office: 826 Days
• Field of Search: None
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H05B 47/105 in response to determined parameters

Abstract

A plasma monitoring device includes a fixing unit, a plasma measuring unit disposed to be in contact with the fixing unit, and measuring a luminous intensity of emitted light of a plasma to output a luminous intensity measurement value, a reference light source unit irradiating reference light having a uniform luminous intensity to the plasma measuring unit, and a control unit receiving the luminous intensity measurement value to calculate a luminous intensity value of the emitted light, controlling a voltage applied to the reference light source unit to uniformly control a luminous intensity of the reference light, comparing a luminous intensity of the reference light irradiated to the plasma measuring unit with a previously stored luminous intensity reference value to detect a correction factor, and applying the correction factor to a luminous intensity value of the emitted light to correct the luminous intensity measurement value.

Claims

1. A plasma monitoring device for a reaction chamber having a reaction space in which plasma is formed, the monitoring device comprising:

a fixing unit configured to be coupled to a side wall of the reaction chamber so as to abut an observation window provided in the side wall;

a plasma measuring unit in contact with a rear end of the fixing unit and configured to measure a luminous intensity of light emitted by the plasma within the reaction chamber via the observation window and to output a luminous intensity measurement value;

a reference light source unit configured to irradiate reference light having a uniform luminous intensity to the plasma measuring unit at a predetermined interval of time; and

a control unit configured to;

receive the luminous intensity measurement value and to calculate a luminous intensity value of the emitted light;

control a voltage applied to the reference light source unit to uniformly control a luminous intensity of the reference light;

compare the luminous intensity of the reference light with a previously stored luminous intensity reference value to detect a correction factor; and

apply the correction factor to a luminous intensity value of the emitted light to correct the luminous intensity measurement value.

2. The plasma monitoring device of claim 1, further comprising a temperature measuring unit configured to measure a temperature of the reference light source unit and to output a temperature measurement value,

wherein the control unit is configured to receive the temperature measurement value and to determine whether the reference light source unit is operating normally.

3. The plasma monitoring device of claim 2, wherein the control unit is configured to determine whether the temperature measurement value is within a temperature reference range, and when the temperature measurement value is within the temperature reference range, the reference light source unit is determined to be operating normally.

4. The plasma monitoring device of claim 3, wherein the control unit is configured to turn the reference light source unit on when the temperature measurement value is within the temperature reference range.

5. The plasma monitoring device of claim 4, wherein the control unit is configured to turn the reference light source unit on for at least one minute.

6. The plasma monitoring device of claim 3, wherein the temperature reference range is from 22°

C. to 26°

C.

7. The plasma monitoring device of claim 2, wherein the control unit is configured to stop operation of the reference light source unit when the temperature measurement value exceeds the temperature reference range.

8. The plasma monitoring device of claim 2, wherein the control unit is configured to stop operation of the plasma measuring unit when the temperature measurement value exceeds the temperature reference range.

9. The plasma monitoring device of claim 1, wherein the fixing unit is directly coupled to the observation window.

10. The plasma monitoring device of claim 1, further comprising a lens unit disposed at a front end of the plasma measuring unit that is configured to direct the emitted light toward the plasma measuring unit.

11. The plasma monitoring device of claim 10, wherein the lens unit comprises a wide angle lens.

12. The plasma monitoring device of claim 1, further comprising an analog-to-digital (A-D) converter configured to convert an analog luminous intensity measurement value produced by the plasma measuring unit into a digital value and to output the digital luminous intensity value to the control unit.

13. A plasma monitoring device for a reaction chamber having a reaction space in which plasma is formed, the monitoring device comprising:

a fixing unit configured to be coupled to a side wall of the reaction chamber so as to abut an observation window provided in the side wall;

a plasma measuring unit in contact with a rear end of the fixing unit and configured to measure a luminous intensity of light emitted by the plasma within the reaction chamber via the observation window and to output a luminous intensity measurement value;

a reference light source unit configured to irradiate reference light having a uniform luminous intensity to the plasma measuring unit at a predetermined interval of time;

a temperature measuring unit configured to measure temperatures of the plasma measuring unit and the reference light source unit and to output temperature measurement values; and

a control unit configured to;

receive the luminous intensity measurement value and to calculate a luminous intensity value of the emitted light;

control a voltage applied to the reference light source unit to uniformly control a luminous intensity of the reference light;

receive the temperature measurement value and to determine whether the plasma measuring unit and the reference light source unit are operating within a temperature reference range;

compare a luminous intensity of the reference light with a previously stored luminous intensity reference value to calculate a difference value; and

apply the difference value to the luminous intensity measurement value to correct the luminous intensity measurement value.

14. The plasma monitoring device of claim 13, wherein the control unit controls a voltage applied to the reference light source unit within a range from 1.6 V to 2.1 V.

15. The plasma monitoring device of claim 13, wherein the temperature measuring unit is disposed between the plasma measuring unit and the reference light source unit.

16. A plasma monitoring device for a reaction chamber in which plasma is formed, the monitoring device comprising:

a body configured to be attached to a side wall of the reaction chamber so as to abut an observation window in the side wall;

a plasma measuring unit located within the body that is configured to measure intensity of light emitted by the plasma within the reaction chamber via the observation window;

at least one lens located within the body and configured to direct the emitted light from the observation window to the plasma measuring unit;

a reference light source located within the body that is configured to irradiate the plasma measuring unit with a reference light; and

a control unit configured to;

receive a luminous intensity measurement value from the plasma measuring unit and to calculate a luminous intensity value of the emitted light;

control a voltage applied to the reference light source unit to uniformly control a luminous intensity of the reference light;

compare the luminous intensity of the reference light with a previously stored luminous intensity reference value to detect a correction factor; and

apply the correction factor to the luminous intensity measurement value.

17. The plasma monitoring device of claim 16, further comprising a temperature measuring unit configured to measure a temperature of the reference light source and to output a temperature measurement value to the control unit.

18. The plasma monitoring device of claim 17, wherein the control unit is configured to determine whether the temperature measurement value is within a temperature reference range.

19. The plasma monitoring device of claim 18, wherein the control unit is configured to turn the reference light source unit on when the temperature measurement value is within the temperature reference range, and wherein the control unit is configured to stop operation of the reference light source unit when the temperature measurement value is not within the temperature reference range.

20. The plasma monitoring device of claim 16, wherein the lens unit comprises a wide angle lens.