Analysis method and semiconductor etching apparatus

• US 10,262,842 B2
• Filed: 06/13/2014
• Issued: 04/16/2019
• Est. Priority Date: 09/20/2013
• Status: Active Grant

• Current Assignee: Hitachi High-Tech Company Limited (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: Asakura, Ryoji, Tamaki, Kenji, Kagoshima, Akira, Shiraishi, Daisuke
• Primary Examiner(s): Lund, Jeffrie R
• Assistant Examiner(s): Antolin, Stanislav
• Application Number:
  US14/303,636
• Publication Number:
  US 20150083328A1
• Time in Patent Office: 1,768 Days
• CPC Class Codes: B81C 2201/0132 Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32926 Software, data control or modelling
• CPC Class Codes: H01J 37/32972 Spectral analysis
• CPC Class Codes: H01J 37/3299 Feedback systems
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.

Claims

1. A plasma etching apparatus, comprising:

a plasma micromachining unit configured to apply an etching processing to a semiconductor wafer using plasma;

an optical emission spectroscopy unit configured to detect light-emission of said plasma, including a wavelength of plasma-light emission when the plasma light-emission was obtained; and

an analysis unit including a calculation unit, wherein said calculation unit is configured to;

identify a wavelength candidate and a time candidate and calculate a corresponding average value of light-emission intensities for the determined wavelength candidate, over a time or a section of times defined by the time candidate;

calculate a first value indicating a difference between predicted results when an etching processing result is predicted by a light-emission intensity, by using a relationship between the etching processing result and light-emission intensities at said wavelength of plasma light-emission and said time or said section of times when the plasma light-emission data was obtained;

calculate a second value indicating a difference between said light-emission intensities when said etching processing conditions are changed, by using a relationship between changes in said etching processing conditions and changes in said light-emission intensities at said wavelength of plasma light-emission and said time or said section of times when the plasma light-emission data was obtained, and

identify a wavelength of plasma light-emission and said time or said section of times when said plasma light-emission was obtained, based on the first value and the second value, said wavelength and said time or said section of times being suitable for the adjustment of said etching processing condition; and

a control unit configured to control a plasma etching unit, the control unit configured to apply an adjustment value of the etching processing conditions so that the etching processing result becomes equal to a target value of the etching processing result, the adjustment value based on the relationship between the light-emission intensity of the plasma light-emission data at the identified wavelength at the identified time or at the identified section of times and the etching processing result at the identified time or at the identified section of times.

2. The plasma etching apparatus according to claim 1, wherein

said first value is a prediction error or a correlation coefficient.

3. The plasma etching apparatus according to claim 2, wherein,

said second value is a prediction error or a correlation coefficient,

said calculation unit is configured to identify said wavelength of plasma light-emission and said time or said section of times when said plasma light-emission was obtained, said wavelength and said time or said section of times being suitable for the adjustment of an etching processing condition, so that a function becomes equal to its minimum value, said prediction error or said correlation coefficient of said first value and said prediction error or said correlation coefficient of said second value being used in said function.

4. The plasma etching apparatus according to claim 2, wherein

said second value is a prediction error or a correlation coefficient,

said calculation unit is configured to identify said wavelength of plasma light-emission and said time or said section of times when said plasma light-emission was obtained, said wavelength and said time or said section of times being suitable for the adjustment of an etching processing condition, so that the sum total of said prediction error of said first value and a product becomes equal to its minimum value, said product being obtained by multiplying said prediction error of said second value by a coefficient, said coefficient indicating said relationship between changes in said etching processing conditions, and changes in said light-emission intensities at said wavelength of plasma light-emission and said time or said section of times when the plasma light-emission data was obtained.

5. The plasma etching apparatus according to claim 1, wherein

said second value is a prediction error or a correlation coefficient.

6. The plasma etching apparatus according to claim 1, wherein

said plasma etching unit performs a plasma etching under said etching processing condition adjusted based on said adjustment value calculated at said calculation unit.

7. A plasma etching apparatus, comprising:

a plasma micromachining unit configured to apply an etching processing to a semiconductor wafer using plasma;

an optical emission spectroscopy unit configured to detect light-emission of said plasma, including a wavelength of plasma-light emission when the plasma light-emission was obtained; and

an analysis unit including a calculation processor constructed at least in part of hardware, wherein said calculation processor is configured to;

calculate a first value indicating a difference between predicted results when an

etching processing result is predicted by a light-emission intensity, by using a relationship between the etching processing result and light-emission intensities at said wavelength of plasma light-emission and said time or said section of times when the plasma light-emission data was obtained;

calculate a second value indicating a difference between said light-emission intensities when said etching processing conditions are changed, by using a relationship between changes in said etching processing conditions and changes in said light-emission intensities at said wavelength of plasma light-emission and said time or said section of times when the plasma light-emission data was obtained, and

identify a wavelength of plasma light-emission and said time or said section of times when said plasma light-emission was obtained, based on the first value and the second value, said wavelength and said time or said section of times being suitable for the adjustment of said etching processing condition; and

a control unit configured to control a plasma etching unit, the control unit configured to apply an adjustment value of the etching processing conditions so that the etching processing result becomes equal to a target value of the etching processing result, the adjustment value based on the relationship between the light-emission intensity of the plasma light-emission data at the identified wavelength at the identified time or at the identified section of times and the etching processing result at the identified time or at the identified section of times.

8. A plasma etching apparatus, comprising:

a plasma micromachining unit configured to apply an etching processing to a semiconductor wafer using plasma;

an optical emission spectroscopy unit configured to detect light-emission of said plasma, including a wavelength of plasma-light emission when the plasma light-emission was obtained; and

an analysis unit including a calculation processor constructed at least in part of hardware, wherein said calculation processor is configured to;

identify a wavelength candidate and a time candidate and calculate a corresponding average value of light-emission intensities for the determined wavelength candidate, over a time or a section of times defined by the time candidate;

calculate a first value indicating a difference between predicted results when an etching processing result is predicted by a light-emission intensity, by using a relationship between the etching processing result and light-emission intensities at said wavelength of plasma light-emission and said time or said section of times when the plasma light-emission data was obtained;

calculate a second value indicating a difference between said light-emission intensities when said etching processing conditions are changed, by using a relationship between changes in said etching processing conditions and changes in said light-emission intensities at said wavelength of plasma light-emission and said time or said section of times when the plasma light-emission data was obtained, and

identify a wavelength of plasma light-emission and said time or said section of times when said plasma light-emission was obtained, based on the first value and the second value, said wavelength and said time or said section of times being suitable for the adjustment of said etching processing condition; and

a control unit configured to control a plasma etching unit, the control unit configured to apply an adjustment value of the etching processing conditions so that the etching processing result becomes equal to a target value of the etching processing result, the adjustment value based on the relationship between the light-emission intensity of the plasma light-emission data at the identified wavelength at the identified time or at the identified section of times and the etching processing result at the identified time or at the identified section of times.