Process for forming a film on a substrate using multi-port injection assemblies

• US 10,262,859 B2
• Filed: 01/05/2018
• Issued: 04/16/2019
• Est. Priority Date: 03/24/2016
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Margetis, Joe, Tolle, John, Bartlett, Gregory, Bhargava, Nupur
• Primary Examiner(s): Henry, Caleb E
• Application Number:
  US15/863,340
• Publication Number:
  US 20180151358A1
• Time in Patent Office: 466 Days
• Field of Search: 438478
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45514 Mixing in close vicinity to the substrate
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: H01L 21/02529 Silicon carbide
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02535 including tin
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02636 Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials

Abstract

A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on individual injection ports of the gas distribution system. The gas distribution may allow for varied tunability of the film properties.

Claims

1. A process for forming a film on a substrate, comprising:

providing a reaction chamber, the reaction chamber holding a substrate to be processed;

providing a first multiple port injector assembly, the first multiple port injector assembly comprising a first plurality of individual port injectors for providing a first gas from a first gas source to the substrate;

providing a second multiple port injector assembly, the second multiple port injector assembly comprising a second plurality of individual port injectors for providing a second gas from a second gas source to the substrate;

flowing the first gas onto the substrate with the first multiple port injector assembly; and

flowing the second gas onto the substrate with the second multiple port injector assembly, wherein one or more of;

the first multiple port injector assembly has an asymmetric bias of the first plurality of individual port injectors, and

the second multiple port injector assembly has an asymmetric bias of the second plurality of individual port injectors;

wherein a substantially uniform distribution of the first gas and the second gas across the substrate is achieved; and

wherein a reaction takes place between the first gas and the second gas on the substrate to form a first film.

2. The process of claim 1, wherein the first gas comprises at least one of:

dichlorosilane (DCS);

silane (SiH₄);

disilane (Si₂H₆);

trisilane (Si₃H₈);

trichlorosilane (TCS);

hydrochloric acid (HCl);

hydrogen (H₂);

or nitrogen (N₂).

3. The process of claim 1, wherein the second gas comprises at least one of:

phosphine (PH₃);

germane (GeH₄);

digermane (Ge₂H₆);

diborane (B₂H₆);

CH₄;

mono-methylsilane (MMS);

tin chloride (SnCl₄);

tin hydride;

hydrochloric acid (HCl);

chlorine (Cl₂);

hydrogen (H₂);

or nitrogen (N₂).

4. The process of claim 1, wherein the reaction chamber performs a selective process on the substrate.

5. The process of claim 4, wherein the selective process comprises a cyclic deposition and etching (CDE) process.

6. The process of claim 4, wherein the selective process comprises a co-flow of the first gas and the second gas.

7. The process of claim 4, wherein the selective process comprises a selective epitaxial growth (SEG) process.

8. The process of claim 1, wherein the reaction chamber performs a non-selective process on the substrate.

9. The process of claim 1, wherein a pressure of the reaction chamber ranges between 1 torr and 760 torr, or between 500 torr and 760 torr.

10. The process of claim 1, wherein a temperature of the reaction chamber ranges between 100°

C. and 800°

C., or between 150°

C. and 500°

C.

11. The process of claim 1, wherein the first multiple port injector assembly has an asymmetric bias of the first plurality of individual port injectors and the asymmetric bias of the first plurality of individual port injectors comprises a first number of individual port injectors flowing the first gas and a second number of individual port injectors not flowing the first gas.

12. The process of claim 1, wherein the second multiple port injector assembly has an asymmetric bias of the second plurality of individual port injectors and the asymmetric bias of the second plurality of individual port injectors comprises a third number of individual port injectors flowing the second gas and a fourth number of individual port injectors not flowing the second gas.

13. A process for forming a film on a substrate, comprising:

providing a reaction chamber, the reaction chamber holding a substrate to be processed;

providing a first multiple port injector assembly, the first multiple port injector assembly comprising a first plurality of individual port injectors for providing a first gas from a first gas source to the substrate;

providing a second multiple port injector assembly, the second multiple port injector assembly comprising a second plurality of individual port injectors for providing a second gas from a second gas source to the substrate;

flowing the first gas onto the substrate with the first multiple port injector assembly, wherein the first multiple port injector assembly has an asymmetric bias of the first plurality of individual port injectors; and

flowing the second gas onto the substrate with the second multiple port injector assembly, wherein the second multiple port injector assembly has an asymmetric bias of the second plurality of individual port injectors;

wherein a substantially uniform distribution of the first gas and the second gas across the substrate is achieved; and

wherein a reaction takes place between the first gas and the second gas on the substrate to form the film.

14. The process of claim 13, wherein the asymmetric bias of the first plurality of individual port injectors comprises a first number of individual port injectors flowing the first gas and a second number of individual port injectors not flowing the first gas.