Fin field effect transistor (FinFET) device structure and method for forming the same
First Claim
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1. A fin field effect transistor (FinFET) device structure, comprising:
- a fin structure formed over a substrate;
a gate structure traversing over the fin structure, wherein the gate structure comprises a gate electrode layer which comprises an upper portion above the fin structure, a lower portion below a top surface of the fin structure, and a bottom portion adjacent to an isolation structure, the upper portion has a top surface with a first width, and the lower portion has a bottom surface with a second width, and the first width is greater than the second width, wherein the top surface is planar and extends from one side of the gate structure to an opposite side of the gate;
structure, wherein the bottom portion has a third width greater than the second width, and a spacer adjacent to the gate structure, wherein a surface of the spacer facing away from the gate structure conforms to a shape of a sidewall of the gate structure from a first surface of the spacer facing the substrate to a second surface of the spacer opposite the first surface.
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Abstract
A FinFET device structure and method for forming the same are provided. The fin field effect transistor (FinFET) device structure includes a fin structure formed over a substrate and a gate structure traversing over the fin structure. The gate structure includes a gate electrode layer which includes an upper portion above the fin structure and a lower portion below the fin structure. The upper portion has a top surface with a first width, the lower portion has a bottom surface with a second width, and the first width is greater than the second width.
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Citations
20 Claims
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1. A fin field effect transistor (FinFET) device structure, comprising:
- a fin structure formed over a substrate;
a gate structure traversing over the fin structure, wherein the gate structure comprises a gate electrode layer which comprises an upper portion above the fin structure, a lower portion below a top surface of the fin structure, and a bottom portion adjacent to an isolation structure, the upper portion has a top surface with a first width, and the lower portion has a bottom surface with a second width, and the first width is greater than the second width, wherein the top surface is planar and extends from one side of the gate structure to an opposite side of the gate;
structure, wherein the bottom portion has a third width greater than the second width, and a spacer adjacent to the gate structure, wherein a surface of the spacer facing away from the gate structure conforms to a shape of a sidewall of the gate structure from a first surface of the spacer facing the substrate to a second surface of the spacer opposite the first surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 18, 19)
- a fin structure formed over a substrate;
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9. A fin field effect transistor (FinFET) device structure, comprising:
- a fin structure formed over a substrate;
an isolation structure formed over the substrate, wherein a portion of the fin structure is embedded in the isolation structure;
a first gate structure traversing over the fin structure, wherein a portion of the first gate structure is formed over the isolation structure, wherein the first gate structure comprises a first gate electrode layer which comprises an upper portion above the fin structure and a lower portion in physical contact with the isolation structure below a top surface of the fin structure, and a bottom portion adjacent to the isolation structure, the upper portion has a top surface with a first width and vertical sidewalls, and the lower portion has a bottom surface with a second width and sloped sidewalls, the lower portion having a decreasing width as the lower portion extends from where the lower portion is in contact with the substrate;
the first width is greater than the second width, and the bottom portion has a third width greater than the second width; and
a spacer with a first section adjacent to the lower portion of the first gate structure, the first section having a sidewall facing away from the lower portion of the first gate structure, the sidewall facing away from the lower portion of the first gate structure intersecting the isolation structure at an angle less than 90 degrees and greater than zero degrees. - View Dependent Claims (10, 11, 12, 13, 14)
- a fin structure formed over a substrate;
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15. A method for forming a fin field effect transistor (FinFET) device structure, comprising:
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forming a fin structure over a substrate; forming an isolation structure over the substrate, wherein a portion of the fin structure is embedded in the isolation structure; forming a gate structure over the fin structure and the isolation structure, wherein the gate structure comprises a gate electrode layer which comprises an upper portion above the fin structure, a lower portion below a top surface of the fin structure, and a bottom portion adjacent to the isolation structure, the upper portion has a top surface with a first width, the lower portion has a bottom surface with a second width, the first width is greater than the second width, and the bottom portion has a third width greater than the second width; forming a spacer adjacent to the gate structure, wherein the forming the spacer is performed after the forming the gate structure; forming an inter-layer dielectric (ILD) structure over the substrate and adjacent to the spacer; removing the gate structure to form a trench in the ILD structure; and filling a gate dielectric layer and a gate electrode layer in the trench. - View Dependent Claims (16, 17, 20)
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Specification