Photodiode with different electric potential regions for image sensors
First Claim
Patent Images
1. An image sensor pixel comprising:
- a photosensitive region formed along a surface of a semiconductor chip;
a storage node below and at least partially overlapping with the photosensitive region; and
a second region configured to transfer charge from the photosensitive region to the storage node;
wherein;
the photosensitive region is doped with a first concentration of a dopant; and
the second region is doped with a second concentration of the dopant that is greater than the first concentration.
0 Assignments
0 Petitions
Accused Products
Abstract
An image sensor pixel is disclosed. The pixel may include a photodiode having a first region with a first potential and a second region with a second, higher potential, with the second region being offset in depth from the first region in a semiconductor chip. A storage node may be positioned at substantially the same depth as the second region of the photodiode. A storage gate may be operable to transfer charge between the photodiode and the storage node.
-
Citations
20 Claims
-
1. An image sensor pixel comprising:
-
a photosensitive region formed along a surface of a semiconductor chip; a storage node below and at least partially overlapping with the photosensitive region; and a second region configured to transfer charge from the photosensitive region to the storage node; wherein; the photosensitive region is doped with a first concentration of a dopant; and the second region is doped with a second concentration of the dopant that is greater than the first concentration. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. An image sensor comprising:
-
a photodiode having a photosensitive first region formed along a first surface of a semiconductor chip and a second region formed below a portion of the first region and extending to proximate a second surface opposite to the first surface of the semiconductor chip; a storage node formed in the semiconductor chip at a depth below and at least partially overlapping with the first region; and a storage gate coupled to a second surface of the semiconductor chip opposite to the first surface and configured to pump a charge from the second region to the storage node; wherein; the first region is doped with a first concentration of a dopant; and the second region is doped with a second concentration of the dopant, the second concentration being greater than the first concentration. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
-
-
17. An image pixel comprising:
-
a photodiode having a photosensitive first region positioned along a first surface of a semiconductor chip and a second region positioned below a portion of the first region; and a storage node positioned proximate to a second surface of the semiconductor chip opposite to the first surface and at least partially overlapping the first region of the photodiode, wherein the storage node is bifurcated into a first region having a first doping level and a second region having a second doping level that is different than the first doping level. - View Dependent Claims (18, 19, 20)
-
Specification