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Photodiode with different electric potential regions for image sensors

  • US 10,263,032 B2
  • Filed: 02/29/2016
  • Issued: 04/16/2019
  • Est. Priority Date: 03/04/2013
  • Status: Active Grant
First Claim
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1. An image sensor pixel comprising:

  • a photosensitive region formed along a surface of a semiconductor chip;

    a storage node below and at least partially overlapping with the photosensitive region; and

    a second region configured to transfer charge from the photosensitive region to the storage node;

    wherein;

    the photosensitive region is doped with a first concentration of a dopant; and

    the second region is doped with a second concentration of the dopant that is greater than the first concentration.

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