Semiconductor device with deep diffusion region
First Claim
1. A method of processing a semiconductor device, comprising:
- providing a semiconductor body having dopants of a first conductivity type;
forming a trench that extends into the semiconductor body along a vertical direction, the trench being laterally confined by two trench sidewalls and vertically confined by a trench bottom;
applying a substance onto a section of a trench surface of the trench, wherein the section is formed by at least one of a first trench sidewall of the two trench sidewalls and at least a portion of the trench bottom of the trench, and wherein applying the substance includes preventing the substance from being applied to a second sidewall of the two trench sidewalls; and
diffusing of the applied substance from the section into the semiconductor body, thereby creating, in the semiconductor body, a semiconductor region having dopants of a second conductivity type and being arranged adjacent to the section, wherein the semiconductor region is arranged adjacent to only the first sidewall.
1 Assignment
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Accused Products
Abstract
A method of processing a semiconductor device, comprising: providing a semiconductor body having dopants of a first conductivity type; forming at least one trench that extends into the semiconductor body along a vertical direction, the trench being laterally confined by two trench sidewalls and vertically confined by a trench bottom; applying a substance onto at least a section of a trench surface formed by one of the trench sidewalls and/or the trench bottom of the at least one trench, such that applying the substance includes preventing that the substance is applied to the other of the trench sidewalls; and diffusing of the applied substance from the section into the semiconductor body, thereby creating, in the semiconductor body, a semiconductor region having dopants of a second conductivity type and being arranged adjacent to the section.
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Citations
14 Claims
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1. A method of processing a semiconductor device, comprising:
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providing a semiconductor body having dopants of a first conductivity type; forming a trench that extends into the semiconductor body along a vertical direction, the trench being laterally confined by two trench sidewalls and vertically confined by a trench bottom; applying a substance onto a section of a trench surface of the trench, wherein the section is formed by at least one of a first trench sidewall of the two trench sidewalls and at least a portion of the trench bottom of the trench, and wherein applying the substance includes preventing the substance from being applied to a second sidewall of the two trench sidewalls; and diffusing of the applied substance from the section into the semiconductor body, thereby creating, in the semiconductor body, a semiconductor region having dopants of a second conductivity type and being arranged adjacent to the section, wherein the semiconductor region is arranged adjacent to only the first sidewall. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification