Method of forming a structure on a substrate
First Claim
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1. A method of providing a structure by depositing a layer on a substrate in a reactor, the method comprising:
- introducing a silicon halide precursor, comprising iodine or bromine, and a carrier gas in the reactor;
purging the reactor by stopping the flow of the silicon halide precursor, while continuing to flow the carrier gas for a sufficient time to diffuse or purge excess silicon halide precursor and silicon halide precursor byproducts, if any, from the reaction space and then;
introducing a reactant gas comprising oxygen in the reactor; and
,providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the silicon halide precursor comprising iodine or bromine into the layer comprising silicon dioxide.
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Abstract
The invention relates to a method of providing a structure by depositing a layer on a substrate in a reactor. The method comprising:
- introducing a silicon halide precursor in the reactor;
- introducing a reactant gas comprising oxygen in the reactor; and,
- providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the first precursor in a layer comprising silicon dioxide.
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Citations
22 Claims
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1. A method of providing a structure by depositing a layer on a substrate in a reactor, the method comprising:
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introducing a silicon halide precursor, comprising iodine or bromine, and a carrier gas in the reactor; purging the reactor by stopping the flow of the silicon halide precursor, while continuing to flow the carrier gas for a sufficient time to diffuse or purge excess silicon halide precursor and silicon halide precursor byproducts, if any, from the reaction space and then; introducing a reactant gas comprising oxygen in the reactor; and
,providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the silicon halide precursor comprising iodine or bromine into the layer comprising silicon dioxide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method of providing a structure by depositing a layer on a substrate, the method comprising:
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providing a silicon halide precursor, comprising iodine or bromine, and a carrier gas in the reactor; purging the reactor by stopping the flow of the silicon halide precursor, while continuing to flow the carrier gas for a sufficient time to diffuse or purge excess silicon halide precursor and silicon halide precursor by products, if any, from the reaction space and then; providing a reactant gas comprising oxygen in the reactor; and
,providing an energy source to create a plasma from the reactant gas so that the reactant gas reacts with the silicon halide precursor comprising iodine or bromine until the layer comprising silicon dioxide is formed.
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Specification