Etching substrates using ale and selective deposition
First Claim
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1. A method of processing substrates, the method comprising:
- (a) exposing a substrate comprising a first carbon containing material to an oxidant and igniting a first plasma with a first bias power to modify a surface of the first carbon containing material; and
(b) exposing the modified surface to a second plasma at a second bias power and for a duration sufficient to remove the modified surface without sputtering.
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Abstract
Methods of and apparatuses for processing substrates having carbon-containing material using atomic layer deposition and selective deposition are provided. Methods involve exposing a carbon-containing material on a substrate to an oxidant and igniting a first plasma at a first bias power to modify a surface of the substrate and exposing the modified surface to an inert plasma at a second bias power to remove the modified surface. Methods also involve selectively depositing a second carbon-containing material onto the substrate. ALE and selective deposition may be performed without breaking vacuum.
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Citations
24 Claims
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1. A method of processing substrates, the method comprising:
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(a) exposing a substrate comprising a first carbon containing material to an oxidant and igniting a first plasma with a first bias power to modify a surface of the first carbon containing material; and (b) exposing the modified surface to a second plasma at a second bias power and for a duration sufficient to remove the modified surface without sputtering. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification