×

Semiconductor structure with ultra thick metal and manufacturing method thereof

  • US 10,269,701 B2
  • Filed: 10/02/2015
  • Issued: 04/23/2019
  • Est. Priority Date: 10/02/2015
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor structure, comprising:

  • a substrate;

    a metal layer over the substrate;

    an ultra thick metal (UTM) over the metal layer, the UTM comprising a top surface;

    a photo-sensitive polymer layer surrounding the UTM, the top surface of the UTM being coplanar with a top surface of the photo-sensitive polymer layer; and

    a post passivation interconnect (PPI) over the UTM, the PPI comprising a vertical sidewall,wherein a thickness of the UTM is equal to or greater than 6 micrometer, the UTM and the metal layer being composed of substantial identical material.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×