Semiconductor element
First Claim
1. A semiconductor element which has an element first main surface, an element second main surface which is a reverse surface of the element first main surface, and element side surfaces and is configured from a semiconductor substrate part and an insulating layer part, the semiconductor element comprising:
- a signal transmission/reception terminal configured to be provided on the element first main surface and transmit/receive signals to/from an external-substrate signal transmission/reception terminal provided on an external substrate that is external to the semiconductor element in a contact manner; and
a signal transmission/reception coil configured to be provided on the element side surface and transmit/receive signals to/from an external semiconductor element signal transmission/reception unit which is provided to an external semiconductor element that is external to the semiconductor element via the element side surface in a non-contact manner, whereinthe signal transmission/reception coil includes a conductor that is formed inside the insulating layer part and a conductor that is formed inside the semiconductor substrate part,the semiconductor substrate part is a semiconductor substrate having a semiconductor substrate first main surface, a semiconductor substrate second main surface which is a reverse surface of the semiconductor substrate first main surface, and semiconductor substrate side surfaces,the insulating layer part is an insulating layer which is arranged on the semiconductor substrate first main surface and has an insulating layer main surface which is a reverse surface of a surface in contact with the semiconductor substrate first main surface, and insulating layer side surfaces,the element first main surface is the insulating layer main surface, the element second main surface is the semiconductor substrate second main surface, and the element side surface is formed by the semiconductor substrate side surface and the insulating layer side surface, andthe signal transmission/reception coil includes a pair of coil forming conductors formed inside the insulating layer, a pair of coil forming through conductors passing through the semiconductor substrate and connected to the pair of coil forming conductors, and a coil forming bridge conductor which is formed on the element second main surface and forms a connection between the pair of coil forming through conductors.
2 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor element that has an element first main surface, an element second main surface that is the reverse surface from the element first main surface, and an element side surface. The semiconductor element is configured from a semiconductor substrate part and an insulating layer part and is provided with: a signal transmission/reception terminal that is provided to the element first main surface and that contacts and can transmit/receive signals to/from an external-substrate signal transmission/reception terminal that is provided to an external substrate that is external to the semiconductor element; and a signal transmission/reception coil that is provided to the element side surface and that, via the element side surface, can transmit/receive signals in a non-contact manner to/from an external-semiconductor-element signal transmission/reception part that is provided to an external semiconductor element that is external to the semiconductor element. The signal transmission/reception coil has: a conductor that is formed inside the insulating layer part; and a conductor that is formed inside the semiconductor substrate part.
12 Citations
9 Claims
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1. A semiconductor element which has an element first main surface, an element second main surface which is a reverse surface of the element first main surface, and element side surfaces and is configured from a semiconductor substrate part and an insulating layer part, the semiconductor element comprising:
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a signal transmission/reception terminal configured to be provided on the element first main surface and transmit/receive signals to/from an external-substrate signal transmission/reception terminal provided on an external substrate that is external to the semiconductor element in a contact manner; and a signal transmission/reception coil configured to be provided on the element side surface and transmit/receive signals to/from an external semiconductor element signal transmission/reception unit which is provided to an external semiconductor element that is external to the semiconductor element via the element side surface in a non-contact manner, wherein the signal transmission/reception coil includes a conductor that is formed inside the insulating layer part and a conductor that is formed inside the semiconductor substrate part, the semiconductor substrate part is a semiconductor substrate having a semiconductor substrate first main surface, a semiconductor substrate second main surface which is a reverse surface of the semiconductor substrate first main surface, and semiconductor substrate side surfaces, the insulating layer part is an insulating layer which is arranged on the semiconductor substrate first main surface and has an insulating layer main surface which is a reverse surface of a surface in contact with the semiconductor substrate first main surface, and insulating layer side surfaces, the element first main surface is the insulating layer main surface, the element second main surface is the semiconductor substrate second main surface, and the element side surface is formed by the semiconductor substrate side surface and the insulating layer side surface, and the signal transmission/reception coil includes a pair of coil forming conductors formed inside the insulating layer, a pair of coil forming through conductors passing through the semiconductor substrate and connected to the pair of coil forming conductors, and a coil forming bridge conductor which is formed on the element second main surface and forms a connection between the pair of coil forming through conductors. - View Dependent Claims (2, 3)
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4. A semiconductor element which has an element first main surface, an element second main surface which is a reverse surface of the element first main surface, and element side surfaces and is configured from a semiconductor substrate part and an insulating layer part, the semiconductor element comprising:
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a signal transmission/reception terminal configured to be provided on the element first main surface and transmit/receive signals to/from an external-substrate signal transmission/reception terminal provided on an external substrate that is external to the semiconductor element in a contact manner; and a signal transmission/reception coil configured to be provided on the element side surface and transmit/receive signals to/from an external semiconductor element signal transmission/reception unit which is provided to an external semiconductor element that is external to the semiconductor element via the element side surface in a non-contact manner, wherein the signal transmission/reception coil includes a conductor that is formed inside the insulating layer part and a conductor that is formed inside the semiconductor substrate part, the semiconductor substrate part is a plurality of semiconductor substrates including a semiconductor substrate first main surface, a semiconductor substrate second main surface which is a reverse surface of the semiconductor substrate first main surface, and semiconductor substrate side surfaces, the insulating layer part is a plurality of insulating layers each of which is arranged on the semiconductor substrate first main surface of each of the plurality of semiconductor substrates and has an insulating layer main surface which is a reverse surface of the semiconductor substrate first main surface, and insulating layer side surfaces, the plurality of semiconductor substrates and the plurality of insulating layers are alternately arranged, the element first main surface is the insulating layer main surface of the closest of the plurality of insulating layers to the element first main surface, the element second main surface is the semiconductor substrate second main surface of the closest of the plurality of semiconductor substrates to the element second main surface, and each of the element side surfaces is formed by the semiconductor substrate side surfaces of the plurality of semiconductor substrates and the insulating layer side surfaces of the plurality of insulating layers, and the signal transmission/reception coil includes a pair of coil forming conductors formed inside an insulating layer on the first main surface which is one of the plurality of insulating layers, a coil forming bridge conductor formed inside an insulating layer on the second main surface which is one of the plurality of insulating layers and is arranged closer to the element second main surface than the insulating layer on the first main surface, and a pair of coil forming through conductors which forms a connection between the pair of coil forming conductors and the coil forming bridge conductor. - View Dependent Claims (5, 6)
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7. A semiconductor element which has an element first main surface, an element second main surface which is a reverse surface of the element first main surface, and element side surfaces and is configured from a semiconductor substrate part and an insulating layer part, the semiconductor element comprising:
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a signal transmission/reception terminal configured to be provided on the element first main surface and transmit/receive signals to/from an external-substrate signal transmission/reception terminal provided on an external substrate that is external to the semiconductor element in a contact manner; and a signal transmission/reception coil configured to be provided on the element side surface and transmit/receive signals to/from an external semiconductor element signal transmission/reception unit which is provided to an external semiconductor element that is external to the semiconductor element via the element side surface in a non-contact manner, wherein the signal transmission/reception coil includes a conductor that is formed inside the insulating layer part and a conductor that is formed inside the semiconductor substrate part, the semiconductor substrate part is a plurality of semiconductor substrates including a semiconductor substrate first main surface, a semiconductor substrate second main surface which is a reverse surface of the semiconductor substrate first main surface, and semiconductor substrate side surfaces, the insulating layer part is a plurality of insulating layers each of which is arranged on the semiconductor substrate first main surface of each of the plurality of semiconductor substrates and has an insulating layer main surface which is a reverse surface of the semiconductor substrate first main surface, and insulating layer side surfaces, the plurality of semiconductor substrates and the plurality of insulating layers are alternately arranged, the element first main surface is the insulating layer main surface of the closest of the plurality of insulating layers to the element first main surface, the element second main surface is the semiconductor substrate second main surface of the closest of the plurality of semiconductor substrates to the element second main surface, and each of the element side surfaces is formed by the semiconductor substrate side surfaces of the plurality of semiconductor substrates and the insulating layer side surfaces of the plurality of insulating layers, and the signal transmission/reception coil includes a pair of coil forming conductors formed inside one of the plurality of insulating layers, a coil forming bridge conductor arranged on the element second main surface, and a pair of coil forming through conductors which forms a connection between the pair of coil forming conductors and the coil forming bridge conductor. - View Dependent Claims (8, 9)
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Specification