Semiconductor structure and manufacturing method thereof
First Claim
1. A method for manufacturing a semiconductor structure, the method comprising:
- forming a dielectric layer on a source/drain structure adjacent to a first spacer of a gate structure, wherein a second spacer is disposed diametrically opposite the gate structure relative to the first spacer;
removing an upper portion of the dielectric layer, such that the dielectric layer and the first spacer of the gate structure form a recess;
rounding a top portion of the first spacer adjacent to the recess to have a rounded top corner and rounding a top portion of the second spacer to have a rounded top corner having a radius of curvature that is different than a radius of curvature of the rounded top corner of the top portion of the first spacer;
forming a protection layer at least on the rounded top corner of the top portion of the first spacer; and
forming a conductive via at least through the dielectric layer to be electrically connected to the source/drain structure.
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Accused Products
Abstract
A semiconductor structure includes a substrate, a first gate structure, a first spacer, a source/drain structure, a conductor, and a contact etch stop layer. The first gate structure is present on the substrate. The first spacer is present on at least one sidewall of the first gate structure, in which the first spacer has a top portion and a bottom portion between the top portion and the substrate. The source/drain structure is present adjacent to the bottom portion of the first spacer. The conductor is electrically connected to the source/drain structure. The protection layer is present at least between the conductor and the top portion of the first spacer. The contact etch stop layer is present at least partially between the conductor and the bottom portion of the first spacer while absent between the protection layer and the top portion of the first spacer.
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Citations
20 Claims
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1. A method for manufacturing a semiconductor structure, the method comprising:
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forming a dielectric layer on a source/drain structure adjacent to a first spacer of a gate structure, wherein a second spacer is disposed diametrically opposite the gate structure relative to the first spacer; removing an upper portion of the dielectric layer, such that the dielectric layer and the first spacer of the gate structure form a recess; rounding a top portion of the first spacer adjacent to the recess to have a rounded top corner and rounding a top portion of the second spacer to have a rounded top corner having a radius of curvature that is different than a radius of curvature of the rounded top corner of the top portion of the first spacer; forming a protection layer at least on the rounded top corner of the top portion of the first spacer; and forming a conductive via at least through the dielectric layer to be electrically connected to the source/drain structure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method, comprising:
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forming a contact etch stop layer in a recess between a first spacer of a first gate structure and a first spacer of a second gate structure; forming a dielectric layer in the recess over the contact etch stop layer to conceal a sidewall of the contact etch stop layer; and recessing the dielectric layer to expose a portion of the sidewall of the contact etch stop layer; and etching the contact etch stop layer, the first spacer of the first gate structure, and a second spacer of the first gate structure diametrically opposite the first spacer of the first gate structure, wherein; a top corner of the second spacer of the first gate structure is etched differently than a top corner of the first spacer of the first gate structure, and the top corner of the second spacer of the first gate structure has a radius of curvature that is different than a radius of curvature of the top corner of the first spacer of the first gate structure. - View Dependent Claims (9, 10, 11, 12)
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13. A method, comprising:
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forming a contact etch stop layer in a recess between a first spacer of a first gate structure and a first spacer of a second gate structure; etching the contact etch stop layer, the first spacer of the first gate structure, and a second spacer of the first gate structure diametrically opposite the first spacer of the first gate structure, wherein; a top corner of the second spacer of the first gate structure is etched differently than a top corner of the first spacer of the first gate structure, and the top corner of the second spacer of the first gate structure has a radius of curvature that is different than a radius of curvature of the top corner of the first spacer of the first gate structure; and forming a protection layer at least on the top corner of the first spacer of the first gate structure after the etching. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification