Display device
First Claim
Patent Images
1. A display device comprising:
- a transistor including a gate electrode, an insulating film over the gate electrode, and an oxide semiconductor film over the insulating film;
an inorganic insulating film over the transistor;
a capacitor including a first electrode and a second electrode;
a conductive film over and in contact with the second electrode, wherein the conductive film is electrically connected to the oxide semiconductor film; and
a light-emitting element including a pixel electrode,wherein the first electrode is in the same layer as the gate electrode,wherein the insulating film is between the first electrode and the second electrode,wherein the second electrode is a light-transmitting metal oxide film, andwherein the pixel electrode is a first light-transmitting conductive film and is electrically connected to the transistor through an opening formed in the inorganic insulating film.
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Abstract
A display device having a high aperture ratio and including a capacitor that can increase capacitance is provided. A pair of electrodes of the capacitor is formed using a light-transmitting conductive film. One of the electrodes of the capacitor is formed using a metal oxide film, and the other of the electrodes of the capacitor is formed using a light-transmitting conductive film. With such a structure, light can be emitted to the capacitor side when an organic insulating film is provided over the capacitor and a pixel electrode of a light-emitting element is formed over the organic insulating film. Thus, the capacitor can transmit light and can overlap the light-emitting element. Consequently, the aperture ratio and capacitance can be increased.
101 Citations
19 Claims
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1. A display device comprising:
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a transistor including a gate electrode, an insulating film over the gate electrode, and an oxide semiconductor film over the insulating film; an inorganic insulating film over the transistor; a capacitor including a first electrode and a second electrode; a conductive film over and in contact with the second electrode, wherein the conductive film is electrically connected to the oxide semiconductor film; and a light-emitting element including a pixel electrode, wherein the first electrode is in the same layer as the gate electrode, wherein the insulating film is between the first electrode and the second electrode, wherein the second electrode is a light-transmitting metal oxide film, and wherein the pixel electrode is a first light-transmitting conductive film and is electrically connected to the transistor through an opening formed in the inorganic insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A display device comprising:
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a transistor including a gate electrode, an insulating film over the gate electrode, and an oxide semiconductor film over the insulating film; an inorganic insulating film over the transistor; a capacitor including a first electrode and a second electrode; a conductive film over and in contact with the second electrode, wherein the conductive film is electrically connected to the oxide semiconductor film; and a light-emitting element including a pixel electrode, wherein the first electrode is in the same layer as the gate electrode, wherein the insulating film is between the first electrode and the second electrode, wherein the second electrode is a first light-transmitting conductive film, wherein the second electrode and the oxide semiconductor film include a same element, and wherein the pixel electrode is a second light-transmitting conductive film and is electrically connected to the transistor through an opening formed in the inorganic insulating film. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A display device comprising:
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a transistor including a gate electrode, an insulating film over the gate electrode, and an oxide semiconductor film over the insulating film; an inorganic insulating film over the transistor; a capacitor including a first electrode and a second electrode; a conductive film over and in contact with the second electrode, wherein the conductive film is electrically connected to the oxide semiconductor film; and a light-emitting element including a pixel electrode, wherein the inorganic insulating film includes an oxide insulating film in contact with the oxide semiconductor film and a nitride insulating film in contact with the oxide insulating film, wherein the first electrode is in the same layer as the gate electrode, wherein the insulating film is between the first electrode and the second electrode, wherein the second electrode is a light-transmitting metal oxide film, and wherein the pixel electrode is a first light-transmitting conductive film and is electrically connected to the transistor through an opening formed in the oxide insulating film and the nitride insulating film. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Miyake, Hiroyuki
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Primary Examiner(s)Movva, Amar
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Application NumberUS15/436,149Publication NumberTime in Patent Office795 DaysField of SearchUS Class CurrentCPC Class CodesH01L 27/1225 with semiconductor material...H01L 27/1248 with a particular compositi...H01L 27/1255 integrated with passive dev...H01L 29/24 including, apart from dopin...H01L 29/7869 having a semiconductor body...H10K 59/1213 the pixel elements being TFTsH10K 59/1216 the pixel elements being ca...H10K 59/123 Connection of the pixel ele...H10K 59/124 Insulating layers formed be...
